Abstract: Good understanding of transport phenomena in vapor deposition systems is critical to fast and effective crystal growth system design. Transport phenomena are complicated and are related to operating conditions, such as temperature, velocity, pressure, and species concentration, and geometrical conditions, such as reactor geometry and source–substrate distance. Due to the limited in situ experimental monitoring, design and optimization of growth is mainly performed through semi-empirical and trial-and-error methods. Such an approach is only able to achieve improvement in the deposition sequence and cannot fulfill the increasingly stringent specifications required in industry. Numerical simulation has become a powerful alternative, as it is fast and easy to obtain critical information for the design and optimization of the growth system. The key challenge in vapor deposition modeling lies in developing an accurate simulation model of gas-phase and surface reactions, since very limited kinetic information is available in the literature. In this chapter, GaN thin-film growth by iodine vapor-phase epitaxy (IVPE) is used as an example to present important steps for system design and optimization by the numerical modeling approach. The advanced deposition model will be presented for multicomponent fluid flow, homogeneous gas-phase reaction inside the reactor, heterogeneous surface reaction on the substrate surface, heat transfer, and species transport. Thermodynamic and kinetic analysis will be presented for gas-phase and surface reactions, together with a proposal for the reaction mechanism based on experiments. The prediction of deposition rates is presented. Finally, the surface evolution of film growth from vapor is analyzed for the case in which surface diffusion determines crystal grain size and morphology. Key control parameters for film instability are identified for quality improvement.

Modeling of Multi-Species Transfer During Aluminum Nitride Vapor Growth

Modeling of Aluminum Nitride Growth by Halide Vapor Transport Epitaxy Method

Modeling of Gas Phase and Surface Reactions in an Aluminum Nitride Growth System

A Thermal Transport And Non-Equilibrium Deposition Model In Aln Sublimation Growth Process

Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Transport phenomena in an aluminum nitride induction heating sublimation growth system

High-quality AlN growth: a detailed study on ammonia flow

Influence of Porous Media and Substrate Rotation on AlN Growth in MNVPE Reactors Based on CFD Simulations

Effect of flux rate on the growth of AlN films on sapphire by MNVPE

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy

Isotropic and Anisotropic Growth Models for the Sublimation Vapour Transport Process

Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal-organic vapor phase epitaxy

Numerical Simulation Study on Chemical Reaction-transport Process of AlN MOCVD Growth

Thermal Environment Evolution and Its Impact on Vapor Deposition in Large Diameter AlN Bulk Growth

Vapor Growth of III Nitrides

Toward homogenous AlN via reaction of Al nanoparticles with N 2 and NH 3 : Reactive molecular dynamics simulation

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Investigation on halide vapor phase epitaxial growth of AlN using N2 as N source

Modeling of a Gallium Nitride Epitaxy Growth System

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases