Abstract:Chemical surface treatments were conducted on mechanically polished (MP) and chemomechanically polished (CMP) (0001)-oriented single crystalline aluminum nitride (AlN) substrates to determine a surface preparation procedure for the homoepitaxial deposition of AlN epitaxial layers by metalorganic chemical vapor deposition. MP AlN substrates characterized by atomic force microscopy exhibited 0.5 nm rms roughness and polishing scratches, while CMP AlN substrates exhibited 0.1 nm rms roughness and were scratch-free. X-ray photoelectron spectroscopy analysis of MP and CMP AlN substrates indicated the presence of a surface hydroxide layer composed of mixed aluminum oxide hydroxide and aluminum trihydroxide. Wet etching with sulfuric and phosphoric acid mixtures reduced the amount of surface hydroxide. Ammonia annealing at 1250 °C converted the substrate hydroxide layer to AlN and increased the rms roughness of MP and CMP AlN substrates to 2.2 nm and 0.2 nm, respectively. AlN epitaxial layers were deposited at 1100–1250 °C under 20 Torr total pressure with a V/III ratio of 180–300 in either N2 or H2 diluent. High-resolution x-ray diffraction measurements revealed that AlN epitaxial layers deposited on MP substrates were strained due to nucleation and coalescence of AlN grains on the mechanically damaged surfaces. AlN deposited on CMP substrates was epitaxial and strain-free. Thermodynamic models for nitridation and AlN deposition were also proposed and evaluated.

Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport

Modeling of Multi-Species Transfer During Aluminum Nitride Vapor Growth

Modeling of Aluminum Nitride Growth by Halide Vapor Transport Epitaxy Method

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Growth and Characterization of Bulk GaN by Ga Vapor Transport

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Research Progress in Growth of Aluminum Nitride Crystal

Investigation, characterization and effect of substrate position on thick AlN layers grown by high temperature chemical vapor deposition

Surface Preparation and Homoepitaxial Deposition of AlN on (0001)-Oriented AlN Substrates by Metalorganic Chemical Vapor Deposition

Bulk GaN Growth by Ga Sublimation and Vapor Transport Technique

Homoepitaxial growth of 3-inch single crystalline AlN boules by the physical vapor transport process

A Thermal Transport And Non-Equilibrium Deposition Model In Aln Sublimation Growth Process

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Structure and Optical Properties of AlN Crystals Grown by Metal Nitride Vapor Phase Epitaxy with Different V/III Ratios.

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition