Abstract:The properties of bulk AlN crystals grown by sublimation recondensation and either randomly nucleated (i.e. self-seeded) or seeded on 6H-SiC substrates or compared. Self-seeding produces crystals of the highest perfection, lowest stress, and low Si and C impurity content, but the crystals grow in random crystallographic orientations. Crystals grown in boron nitride crucibles typically form thin platelets with the fastest growth occurring in the c-axis direction. Growth striations run the length of the crystals in the c-axis direction. Anisotropic etching in aqueous 45wt% KOH solutions shows that the growth (0001) planes exposed to the AlN source predominately have an aluminum polarity. AlN crystals seeded on 6H-SiC(0001) have a single crystallographic orientation and the largest dimensions are perpendicular to the c-axis, determined by the size of the substrate. Cracking and voids in the AlN layer produced by differences in thermal expansion coefficients of AlN and SiC and decomposition of the SiC were ameliorated by depositing an AlN–SiC alloy layer on the SiC before growing the AlN layer. Raman spectroscopy measurements suggest the AlN and AlN–SiC alloy layer are both under tensile stress. The defect density in AlN crystals grown on composite AlN–SiC/6H-SiC substrates was 3.7×105cm−2, as determined by synchrotron white beam X-ray topography.

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on Sic (0001) Substrates

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

Characterization of Aluminum Nitride Crystals Grown by Sublimation

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Bulk AlN crystal growth by direct heating of the source using microwaves

Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Defect-selective Etching of Bulk AlN Single Crystals in Molten KOH/NaOH Eutectic Alloy

Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

Research Progress in Growth of Aluminum Nitride Crystal

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

AlN Thin Films Deposited on Different Si-based Substrates Through RF Magnetron Sputtering

Growth Evolution Of Aln Films On Silicon (111) Substrates By Pulsed Laser Deposition

Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal–Organic Chemical Vapour Deposition

Epitaxial Growth of High Quality AlN Films on Si Substrates