Abstract:The growth process is crucial to achieve large-sized and high-quality aluminum nitride (AlN) crystals through the physical vapor transport (PVT) method. To investigate the influence of parameters on the growth of AlN crystals, a series of quasi-steady numerical simulations on the temperature distribution, growth rate, and partial pressure of Al vapor inside the growth cell were conducted based on a self-developed finite element mass transfer module in the COMSOL package, which considers the partial pressure of gas phases, for different growth temperatures and crucible positions. The simulation results show that increasing the growth temperature significantly augments the partial pressure of Al vapor and the growth rate in the growth cell. Simultaneously, variation of the crucible position substantially alters the temperature distribution and the transport direction of Al vapor inside the crucible. A novel heat sink on the top of the crucible was designed to impair the phenomenon of uneven crystal growth on the surface of the seed caused by the nonuniform radial temperature distribution. Compared to the original crucible, the radial temperature gradient of the optimized crucible was reduced by 37%, and the uniformity of seed surface growth was improved by 89%. This work guides the design of a novel crystal growth furnace and the preparation of high-quality AlN single crystals by the PVT method.

Effect of Various Crucibles for High Quality AIN Crystal Growth on SiC Seed by PVT Method

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Crucible Materials for Growth of Aluminum Nitride Crystals

The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on Sic (0001) Substrates

Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Growth of Low-Defect SiC and AlN Crystals in Refractory Metal Crucibles

Characterization of Aluminum Nitride Crystals Grown by Sublimation

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Effect of thermal environment evolution on AlN bulk sublimation crystal growth

Crystal Quality Evolution Of Aln Films Via High-Temperature Annealing Under Ambient N-2 Conditions

Strain management and AlN crystal quality improvement with an alternating V/III ratio AlN superlattice

Effects of Aln Nucleation Layer Thickness on Crystal Quality of Aln Grown by Plasma-Assisted Molecular Beam Epitaxy

Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

Period Size Effect Induced Crystalline Quality Improvement of AlN on a Nano-Patterned Sapphire Substrate

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere