Abstract:Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for the development of GaN homoepitaxy. We propose a new approach to grow high-quality homoepitaxial GaN in N2-rich carrier gas and at a higher supersaturation as compared to heteroepitaxy. We develop a low-temperature GaN as an optimum nucleation scheme based on the evolution and thermal stability of the GaN surface under different gas compositions and temperatures. Analysis in the framework of nucleation theory of homoepitaxial layers simultaneously grown on GaN templates on SiC and on hydride vapor phase epitaxy GaN substrates is presented. We show that residual strain and screw dislocation densities affect GaN nucleation and subsequent growth leading to distinctively different morphologies of GaN homoepitaxial layers grown on GaN templates and native substrates, respectively. The established comprehensive picture provides a guidance for designing strategies for growth conditions optimization in GaN homoepitaxy. GaN with atomically flat and smooth epilayer surfaces with a root-mean-square roughness value as low as 0.049 nm and low background carbon concentration of 5.3 × 1015 cm–3 has been achieved. It is also shown that there is no generation of additional dislocations during homoepitaxial growth. Thus, our results demonstrate the potential of the hot-wall MOCVD technique to deliver high-quality GaN material for vertical power devices.

Bulk GaN Growth by Ga Sublimation and Vapor Transport Technique

Thick GaN Layer Grown by Ga Vapor Transport Technique

Bulk GaN Growth by Gallium Vapor Transport Technique

Rapid Growth of Bulk Gan Crystal Using Gan Powder As Source Material

Growth and Characterization of Bulk GaN by Ga Vapor Transport

Bulk GaN Growth by Gallium Vapor Transport

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Hvpe Homoepitaxial Growth of High Quality Bulk Gan Using Acid Wet Etching Method and Its Mechanism Analysis

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport

Growth And Doping Of Bulk Gan By Hydride Vapor Phase Epitaxy

HVPE growth of bulk GaN with high conductivity for vertical devices

Growth of Freestanding GaN Crystals on Three-Dimensional Mesh Porous Substrate by HVPE

Synthesis And Properties Of Hvpe Nitride Substrates

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Growth Behavior and Stress Distribution of Bulk GaN Grown by Na-flux with HVPE GaN Seed under Near-Thermodynamic Equilibrium

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Highly Uniform Growth of 2-Inch GaN Wafers with a Multi-Wafer HVPE System