Abstract:Thick GaN layers with a low concentration of defects are the key to enable next-generation vertical power electronic devices. Here, we explore hot-wall metalorganic chemical vapor deposition (MOCVD) for the development of GaN homoepitaxy. We propose a new approach to grow high-quality homoepitaxial GaN in N2-rich carrier gas and at a higher supersaturation as compared to heteroepitaxy. We develop a low-temperature GaN as an optimum nucleation scheme based on the evolution and thermal stability of the GaN surface under different gas compositions and temperatures. Analysis in the framework of nucleation theory of homoepitaxial layers simultaneously grown on GaN templates on SiC and on hydride vapor phase epitaxy GaN substrates is presented. We show that residual strain and screw dislocation densities affect GaN nucleation and subsequent growth leading to distinctively different morphologies of GaN homoepitaxial layers grown on GaN templates and native substrates, respectively. The established comprehensive picture provides a guidance for designing strategies for growth conditions optimization in GaN homoepitaxy. GaN with atomically flat and smooth epilayer surfaces with a root-mean-square roughness value as low as 0.049 nm and low background carbon concentration of 5.3 × 1015 cm–3 has been achieved. It is also shown that there is no generation of additional dislocations during homoepitaxial growth. Thus, our results demonstrate the potential of the hot-wall MOCVD technique to deliver high-quality GaN material for vertical power devices.

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring

Synthesis And Properties Of Hvpe Nitride Substrates

Investigation of Catalyst-Assisted Growth of Nonpolar GaN Nanowiresviaa Modified HVPE Process

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Growth of Freestanding Gallium Nitride (gan) Through Polyporous Interlayer Formed Directly During Successive Hydride Vapor Phase Epitaxy (HVPE) Process

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Growth of A-Plane Gan Films on R-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with the Hydride Vapor Phase Epitaxy

Growth of High-Quality GaN Crystals on a BCN Nanosheet-Coated Substrate by Hydride Vapor Phase Epitaxy

Hydrogen induced changes on hydride vapor phase epitaxy of GaN growth

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Circumventing the ammonia-related growth suppression for obtaining regular GaN nanowires by HVPE

Gallium nitride nanowires grown by hydride vapor phase epitaxy

High Quality Self-Separated GaN Crystal Grown on a Novel Nanoporous Template by HVPE

Properties of GaN film grown by hydride vapor phase epitaxy

Epitaxial growth of a self-separated GaN crystal by using a novel high temperature annealing porous template

Hydride vapor phase epitaxy of GaN on self-organized patterned graphene masks

Hot-Wall MOCVD for High-Quality Homoepitaxy of GaN: Understanding Nucleation and Design of Growth Strategies

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts