Abstract:GaN is considered as a promising material for high power,high temperature and high frequency microwave applications,due to the wide band gap,high thermal stability and high breakdown voltage.Due to lack of suited homosubstrates,GaN is currently grown on heterosubstrates where SiC is the most popular choice for commercial applications.However,it is difficult to obtain high quality GaN because of the 33.1% mismatch of thermal expansion coefficients and the large lattice mismatch(3.5%) between GaN and SiC.In this paper,GaN epitaxial layers were grown on 6H-SiC substrates by metalorganic chemical vapor deposition.Samples employing high temperature AlN as buffer layers produce high quality GaN epitaxial layers. Five samples with different AlN buffer layers were prepared.The effects of the growth parameters of AlN buffer layers on characterizations of GaN were studied.The highest quality GaN layer grown on SiC substrate with AlN buffer was obtained by optimizing the growth parameters of the AlN buffer.The full width at half maximum of High-resolution X-ray diffraction on-axis(0002) and off-axis(1012) diffraction are 130 arcsec and 252 arcsec,respectively.The values are the best result of GaN grown on homemade 6H-SiC.The quality of GaN layers will be deteriorated by increasing the thickness or the growth Ⅴ/Ⅲ ratio of AlN buffer layers,while the low growth temperature of AlN buffers also deteriorate the quality of GaN layers.The strain in GaN also has been studied.It is found that the GaN layer with narrow XRC FWHM has less stress intensity.

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD

The Influence of AlN/GaN Superlattice Intermediate Layer on the Properties of GaN Grown on Si (111) Substrates

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Structure of Interlayer on Si(111) Substrate Effect on GaN Film

The Impact of Nanoporous SiN X Interlayer Growth Position on High-Quality GaN Epitaxial Films

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

GaN grown on Si(111) with step-graded AlGaN intermediate layers

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

Improvement of the Quality of GaN Epilayer by Combining a SiN X Interlayer and Changed GaN Growth Mode

High quality crack-free GaN film grown on si (111) substrate without AlN interlayer