Abstract:The preparation of gallium nitride (GaN) film materials has significant importance in the semiconductor and thermoelectric sectors, serving as essential core materials for chips, power supply, and communication applications. The production of GaN thin films with reduced defect density has emerged as a significant and continuous subject of research. This work investigated the deposition process of GaN thin films on an aluminum nitride nanopattern substrate via molecular dynamics simulation. A comparison was made between the deposition process on the nanopatterned and unpatterned substrates. Additionally, the impact of the substrate temperature and nanopillar radius on the quality of the thin film was examined. Results demonstrate that the use of a nanopillar pattern on the substrate facilitates the acquisition of the deposited film with a larger number of wurtzite structures and a reduced presence of dislocations. In contrast to the persistent and extensive dislocations formed in the thin films on an unpatterned substrate, the dislocations present in the thin films on a patterned substrate exhibit shorter lengths and more complexity. By appropriately elevating the temperature of the substrate, it is possible to effectively decrease the complexity of the atomic structure and enhance the thin film density. The correlation between the stress and the temperature of the thin film deposited on the patterned substrate is weak. The deformation of nanopillars with a too small radius can cause the deposited atoms to move into the nanovoid, aggravating the irregularity of the thin film surface and the volume of defects. Moreover, the excessive size of the nanopillar at which the surface area of the substrate approaches that of an unpatterned substrate can increase the occurrence of dislocations in the deposited film. This observation implies that the nanovoid ratio inside the nanopillar has a substantial impact on the deposition quality of the thin film. This study focuses on the deposition of GaN films on substrates with nanopatterns at the nanoscale, assesses the impact of nanopatterning degree on the growth quality of film, and acquires data on the temperature range and structural characteristics of high-quality films exhibiting high density and few dislocations.

The Impact of Nanoporous SiN X Interlayer Growth Position on High-Quality GaN Epitaxial Films

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Influence of In-Situ Deposited SiNx Interlayer on Crystal Quality of GaN Epitaxial Films

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer

Improvement of the Quality of a GaN Epilayer by Employing a SiN X Interlayer

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Improvement of the Quality of GaN Epilayer by Combining a SiN X Interlayer and Changed GaN Growth Mode

Improvements of Epitaxial Quality and Stress State of GaN Grown on SiC by in Situ SiNx Interlayer

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Effect of Interface Nucleation Time of the Gan Nucleation Layer on the Crystal Quality of Gan Film

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Characterization of Gan Epitaxial Films Grown on Sinx and Tinx Porous Network Templates

Improvement of Quality and Strain Relaxation of GaN Epilayer Grown on SiC Substrate by in Situ SiNx Interlayer

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Study on Growth Quality of GaN Deposition on Nanopillar-Patterned Substrates: Microstructure Characterization and Crystalline Quality Optimization

Design and Epitaxial Growth of Quality-Enhanced Crack-Free GaN Films on AlN/Al Heterostructures and Their Nucleation Mechanism

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer