Abstract:In this paper, N-polar GaN films were grown on vicinal C-face SiC substrates by metal-organic chemical vapor deposition. In situ porous SiNx interlayers with different deposition times of 0 s to 120 s were adopted in the growth processes of N-polar GaN films. We find that the crystalline quality, such as surface morphology and structural characteristics, of N-polar GaN films can be controlled by changing the deposition time of the SiNx interlayers. The N-polar GaN film with a SiNx deposition time of 60 s exhibits the best crystallinity. Based on the observed porous feature of the SiNx interlayer from the phase image obtained using an atomic force microscope, we propose a model to illustrate the epitaxial growth mechanism of N-polar GaN films grown on the top of the porous SiNx interlayer. In this model, we reveal that the SiNx deposition time determines the SiNx coverage and the nucleated island density of overgrown GaN, which markedly affects the structural characteristics of the N-polar GaN films. This model can also be used to analyze the influence of SiNx deposition times on the stress states in N-polar GaN films. Additionally, the threading dislocation propagation behaviors were observed experimentally from the cross-sectional transmission electron microscopy image of N-polar GaN with a SiNx interlayer, which demonstrates the reasonability of this model. It is reasonably believed that this work provide a valuable information to obtain high-quality GaN films that can be used to the fabrication of N-polar GaN-based optoelectronic devices.

Improvement of the Quality of GaN Epilayer by Combining a SiN X Interlayer and Changed GaN Growth Mode

Improvement of the Quality of a GaN Epilayer by Employing a SiN X Interlayer

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Improvement of Quality and Strain Relaxation of GaN Epilayer Grown on SiC Substrate by in Situ SiNx Interlayer

The Impact of Nanoporous SiN X Interlayer Growth Position on High-Quality GaN Epitaxial Films

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

The growth optimization and mechanism of N-polar GaN films with an in situ porous SiNx interlayer

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

Influence of In-Situ Deposited SiNx Interlayer on Crystal Quality of GaN Epitaxial Films

Improvements of Epitaxial Quality and Stress State of GaN Grown on SiC by in Situ SiNx Interlayer

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

The Evolution of a GaN/sapphire Interface with Different Nucleation Layer Thickness During Two-Step Growth and Its Influence on the Bulk GaN Crystal Quality

Improvement of (11\bar{2}2) Semipolar GaN Crystal Quality with TiN Interlayer by Metal Organic Vapor Phase Epitaxy

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Improvement of (112̄2) semipolar gan crystal quality with tin interlayer by metal organic vapor phase epitaxy

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Influences of SiNx Interlayer on the Crystalline Quality and the Surface Morphology of GaN Epitaxial Films

Improved quality of GaN epilayer grown on porous SiC substrate by in situ H 2 pre-treatment

Improved Crystal Quality of Gan Film with the In-Plane Lattice-Matched In0.17al0.83n Interlayer Grown on Sapphire Substrate Using Pulsed Metal Organic Chemical Vapor Deposition