Abstract:The performance of GaAs-based field-effect transistors (FETs) in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor (MIS) structure. Attempts thus far have fallen short due to large interface trap concentrations, frequency dispersion, and hysteresis. By taking advantage of an in-situ process approach, we successfully gated insulator — GaAs structures with excellent interfacial properties. The structures utilize a Si interface layer or a composite Si/Ge layer grown on GaAs followed by a Si3N4 dielectric layer, all using a III–V molecular beam epitaxy (MBE) system connected by an ultrahigh vacuum transfer tube to an adjacent electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. This pseudo-in-situ feature in concert with recently implemented vacuum connected scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) allows investigations of the essential interface layers. High/low frequency capacitance-voltage, conductance versus frequency, and metal-insulator-semiconductor field-effect transistors (MISFETs) were used for a comprehensive characterization of the n-type MIS structures. From the stringent conductance measurements, interface state densities in the high 1010 eV−1 cm−2 have been obtained. The hysteresis is about 150 mV for a field swing of +4 to −4 MV/cm. The frequency dispersion is nearly zero except near inversion where its value is about 100 mV. Self aligned gate depletion mode MISFETs having 3 μm gate lengths exhibited transconductances of 169 mS/mm for the pseudomorphic InGaAs channels and about 100–140 mS/mm for GaAs channels.

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Characteristics of In-Situ Deposited Gaas Metal-Insulator-Semiconductor Structures

Interface Properties of Si3N4Si/n-GaAs Metal-Msulator-semiconductor Structure Using a Si Interlayer

Gaas-Based Metal-Insulator-Semiconductor Structures with Low Interface Traps Using Molecular-Beam Epitaxy and Chemical-Vapor-Deposition

Characteristics of Si3N4/GaAs Metal-Lnsulator-semiconductor Interfaces with Coherent Si/Al0.3Ga0.7As Interlayers

Interface properties of Si 3 N 4 /Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

Thermal stability of Si3N4/Si/GaAs interfaces

Characteristics of Si3n4/Si/N-Gaas Metal-Insulator-Semiconductor Interfaces Grown on Gaas(111)B Substrate

Metal-Insulator-Semiconductor Structures on P-Type Gaas with Low Interface State Density

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Improvement of Atomic-Layer-Deposited Al2o3/Gaas Interface Property by Sulfuration and Nh3 Thermal Nitridation

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

Metal–insulator–semiconductor Structure on GaAs Using a Pseudomorphic Si/GaP Interlayer

Improvement of Atomic-Layer-Deposited Al2o3/Gaas Interface Quality Through A Novel Sulfuration Method

Improving the rectification characteristics of GaN/Si heterojunction by constructing an interpenetrating two-phase interface layer

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Germanium implantation

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Impact of in Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors

Improvement of the Quality of GaN Epilayer by Combining a SiN X Interlayer and Changed GaN Growth Mode