Abstract:A deep understanding of the interface states in metal-oxide-semiconductor (MOS) structures is the premise of improving the gate stack quality, which sets the foundation for building field-effect transistors (FETs) with high performance and high reliability. Although MOSFETs built on aligned semiconducting carbon nanotube (A-CNT) arrays have been considered ideal energy-efficient successors to commercial silicon (Si) transistors, research on the interface states of A-CNT MOS devices, let alone their optimization, is lacking. Here, we fabricate MOS capacitors based on an A-CNT array with a well-designed layout and accurately measure the capacitance-voltage and conductance-voltage (C-V and G-V) data. Then, the gate electrostatics and the physical origins of interface states are systematically analyzed and revealed. In particular, targeted improvement of gate dielectric growth in the A-CNT MOS device contributes to suppressing the interface state density (D-it) to 6.1 x 10(11) cm(-2) eV(-1), which is a record for CNT- or low-dimensional semiconductors-based MOSFETs, boosting a record transconductance (g(m)) of 2.42 mS/mu m and an on-off ratio of 10(5). Further decreasing D-it below 1 x 10(11) cm(-2) eV(-1) is necessary for A-CNT MOSFETs to achieve the expected high energy efficiency.

Metal-Insulator-Semiconductor Structures on P-Type Gaas with Low Interface State Density

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

High-frequency Capacitance–voltage Measurement of Plasma-Enhanced Chemical-Vapor-deposition-grown SiO2/n-GaN Metal-Insulator-semiconductor Structures

Effective passivation of p- and n- type In0.53Ga0.47As in achieving low leakage current, low interfacial traps, and low border traps

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Physical and Electrical Properties of a Si3N4/Si/GaAs Metal–insulator–semiconductor Structure

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Studies of Metal–ferroelectric–gan Structures

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Low Trap Density Nonleaky SiGe Quantum Well MOS Structures:Fabrication and Characteristics

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Physical and electrical properties of a Si 3 N 4 Õ Si Õ GaAs metal – insulator – semiconductor structure

Gasb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited Hfalo As Gate Dielectric

Study on the AlN/Si Interface Properties

Study on the AlN/Si(111) interface properties

New Insights in the Passivation of High-K/inp Through Interface Characterization and Metal–oxide–semiconductor Field Effect Transistor Demonstration: Impact of Crystal Orientation

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Study of Interface Trap States of AlN-Si(111) Heterostructure*

Reduction in density of interface traps determined by C-V analysis in III-nitride-based MOSHFET structure

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality