Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Gasb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited Hfalo As Gate Dielectric

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Interface Studies Of Gaas Metal-Oxide-Semiconductor Structures Using Atomic-Layer-Deposited Hfo2/Al2o3 Nanolaminate Gate Dielectric

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

C-V and J-V Investigation of HfO2/Al2O3 Bilayer Dielectrics MOSCAPs on (100) Β-Ga2o3

Comparison of Hfalo, Hfo2/Al2o3, and Hfo2 on N-Type Gaas Using Atomic Layer Deposition

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Interfacial and Electrical Properties of Hfalo/Gasb Metal-Oxide-Semiconductor Capacitors with Sulfur Passivation

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C)

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Interface Optimization and Transport Modulation of Sm2O3/InP Metal Oxide Semiconductor Capacitors with Atomic Layer Deposition-Derived Laminated Interlayer

Gasb Inversion-Mode Pmosfets with Atomic-Layer-Deposited Al2o3 As Gate Dielectric

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Interface Optimization and Modulation of Leakage Current Conduction Mechanism of Yb 2 O 3 /GaSb MOS Capacitors with ALD-Driven Laminated Interlayers

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Improved Interface Properties and Dielectric Breakdown in Recessed AlGaN/GaN MOS-HEMTs Using HfSiO $_{{x}}$ As Gate Dielectric