Abstract:The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of the HfO2/Si0.7Ge0.3 stack MOS (Metal-Oxide-Semiconductor) capacitor under ozone direct oxidation (pre-O sample) increases obviously. This is because the tiny amounts of GeOx in the formed interlayer (IL) oxide layer are more likely to diffuse into HfO2 and cause the HfO2/Si0.7Ge0.3 interface to deteriorate. Moreover, a post-HfO2-deposition (post-O) ozone indirect oxidation is proposed for the HfO2/Si0.7Ge0.3 stack; it is found that compared with pre-O sample, the Dit of the post-O sample decreases by about 50% due to less GeOx available in the IL layer. This is because the amount of oxygen atoms reaching the interface of HfO2/Si0.7Ge0.3 decreases and the thickness of IL in the post-O sample also decreases. To further reduce the Dit of the HfO2/Si0.7Ge0.3 interface, a Si-cap passivation with the optimal thickness of 1 nm is developed and an excellent HfO2/Si0.7Ge0.3 interface with Dit of 1.53 × 1011 eV−1cm−2 @ E−Ev = 0.36 eV is attained. After detailed analysis of the chemical structure of the HfO2/IL/Si-cap/Si0.7Ge0.3 using X-ray photoelectron spectroscopy (XPS), it is confirmed that the excellent HfO2/Si0.7Ge0.3 interface is realized by preventing the formation of Hf-silicate/Hf-germanate and Si oxide originating from the reaction between HfO2 and Si0.7Ge0.3 substrate.

Interfacial and Electrical Properties of Hfalo/Gasb Metal-Oxide-Semiconductor Capacitors with Sulfur Passivation

Improved Properties of HfO2/Al2O3/GaSb MOS Capacitors Passivated with Neutralized (NH4)2S Solutions

Modulation of Interfacial and Electrical Properties of Hfgdo/Gaas Gate Stacks by Ammonium Sulfide Passivation and Rapid Thermal Annealing

Effects of Sulfur Passivation on GaSb Metal–Oxide–Semiconductor Capacitors with Neutralized and Unneutralized (NH4)2S Solutions of Varied Concentrations

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Balanced Performance Improvement and Low-Frequency Noise of TMA-Passivated GaSb MOS Capacitors Using Bilayered HfO$_{\text{2}}$/Al$_{\text{2}}$O$_{\text{3}}$ Gate Dielectrics

Improved Interfacial and Electrical Properties of Gasb Metal Oxide Semiconductor Devices Passivated with Acidic (nh4)(2)s Solution

Improved Interfacial and Electrical Properties of GaSb Metal Oxide Semiconductor Devices Passivated with Acidic (NH4)2S Solution

Improved Properties of Ge Mos Capacitors with Hftion or Hftio Gate Dielectric by Using Wet-No Ge-Surface Pretreatment

Gasb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited Hfalo As Gate Dielectric

Optimizing interface properties of HfO2/Si0.73Ge0.27 gate stacks through sulfur passivation and post-deposition annealing

Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Improved Characteristics of Gasb Mos Capacitors by Ozone Post Deposition Treatment

Effects of Ozone pre-deposition treatment on GaSb MOS capacitors

Comparison Of The Interfacial And Electrical Properties Of Hfalo Films On Ge With S And Geo2 Passivation

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

Sulfur Passivation for the Formation of Si-terminated Al 2 O 3/ SiGe(0 0 1) Interfaces

Improved Interface Properties and Reliability for Hf-In-Zn-O Semiconductor Capacitors with an Electric-Double-Layer Gate Dielectric by Inserting A Hfo2 Interlayer

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors