Abstract:The performance of GaAs-based field-effect transistors (FETs) in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor (MIS) structure. Attempts thus far have fallen short due to large interface trap concentrations, frequency dispersion, and hysteresis. By taking advantage of an in-situ process approach, we successfully gated insulator — GaAs structures with excellent interfacial properties. The structures utilize a Si interface layer or a composite Si/Ge layer grown on GaAs followed by a Si3N4 dielectric layer, all using a III–V molecular beam epitaxy (MBE) system connected by an ultrahigh vacuum transfer tube to an adjacent electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. This pseudo-in-situ feature in concert with recently implemented vacuum connected scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) allows investigations of the essential interface layers. High/low frequency capacitance-voltage, conductance versus frequency, and metal-insulator-semiconductor field-effect transistors (MISFETs) were used for a comprehensive characterization of the n-type MIS structures. From the stringent conductance measurements, interface state densities in the high 1010 eV−1 cm−2 have been obtained. The hysteresis is about 150 mV for a field swing of +4 to −4 MV/cm. The frequency dispersion is nearly zero except near inversion where its value is about 100 mV. Self aligned gate depletion mode MISFETs having 3 μm gate lengths exhibited transconductances of 169 mS/mm for the pseudomorphic InGaAs channels and about 100–140 mS/mm for GaAs channels.

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Partially Crystallized Ultrathin Interfaces Between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing

Insight into the Near-Conduction Band States at the Crystallized Interface Between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Robust SiNx/AlGaN Interface in GaN HEMTs Passivated by Thick LPCVD-Grown SiNx Layer

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Improved LPCVD-SiNx/AlGaN/GaN MIS-HEMTs by Using In-Situ MOCVD-SiNx As an Interface Sacrificial Layer

Characteristics of In-Situ Deposited Gaas Metal-Insulator-Semiconductor Structures

Gaas-Based Metal-Insulator-Semiconductor Structures with Low Interface Traps Using Molecular-Beam Epitaxy and Chemical-Vapor-Deposition

In Situ Growth of SiN X As Gate Dielectric and Surface Passivation for AlN / GaN Heterostructures by Metalorganic Chemical Vapor Deposition

Characterization of Leakage and Reliability of SiN<sub><italic>x</italic></sub> Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Characterization of Leakage and Reliability of SiN x Gate Dielectric by Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs

Effect of Alloying Temperature on the Capacitance–voltage and Current–voltage Characteristics of Low-Pressure Chemical Vapor Deposition SiNx/n-GaN MIS Structures

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110)

Characterization of in Situ SiNx Thin Film Grown on AlN/GaN Heterostructure by Metal-Organic Chemical Vapor Deposition

Interface Charge Engineering in Down-Scaled AlGaN (<6 Nm)/gan Heterostructure for Fabrication of GaN-based Power HEMTs and MIS-HEMTs

Gan-Based Metal-Insulator-Semiconductor High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor Deposition Sinx As Gate Dielectric

Improving the rectification characteristics of GaN/Si heterojunction by constructing an interpenetrating two-phase interface layer

Vacancy-engineering-induced dislocation inclination in III-nitrides on Si substrates