Abstract:The performance of GaAs-based field-effect transistors (FETs) in switching and power applications can be enhanced substantially by employing a metal-insulator-semiconductor (MIS) structure. Attempts thus far have fallen short due to large interface trap concentrations, frequency dispersion, and hysteresis. By taking advantage of an in-situ process approach, we successfully gated insulator — GaAs structures with excellent interfacial properties. The structures utilize a Si interface layer or a composite Si/Ge layer grown on GaAs followed by a Si3N4 dielectric layer, all using a III–V molecular beam epitaxy (MBE) system connected by an ultrahigh vacuum transfer tube to an adjacent electron cyclotron resonance (ECR) plasma enhanced chemical vapor deposition (CVD) system. This pseudo-in-situ feature in concert with recently implemented vacuum connected scanning tunneling microscopy (STM) and X-ray photoelectron spectroscopy (XPS) allows investigations of the essential interface layers. High/low frequency capacitance-voltage, conductance versus frequency, and metal-insulator-semiconductor field-effect transistors (MISFETs) were used for a comprehensive characterization of the n-type MIS structures. From the stringent conductance measurements, interface state densities in the high 1010 eV−1 cm−2 have been obtained. The hysteresis is about 150 mV for a field swing of +4 to −4 MV/cm. The frequency dispersion is nearly zero except near inversion where its value is about 100 mV. Self aligned gate depletion mode MISFETs having 3 μm gate lengths exhibited transconductances of 169 mS/mm for the pseudomorphic InGaAs channels and about 100–140 mS/mm for GaAs channels.

Characteristics of Si3n4/Si/N-Gaas Metal-Insulator-Semiconductor Interfaces Grown on Gaas(111)B Substrate

Interface properties of Si 3 N 4 /Si/n-GaAs metal-insulator-semiconductor structures grown on GaAs(111)B substrate

Characteristics of Si3N4/GaAs Metal-Lnsulator-semiconductor Interfaces with Coherent Si/Al0.3Ga0.7As Interlayers

Characteristics of In-Situ Deposited Gaas Metal-Insulator-Semiconductor Structures

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Interface Properties of Si3N4Si/n-GaAs Metal-Msulator-semiconductor Structure Using a Si Interlayer

Metal–insulator–semiconductor Structure on GaAs Using a Pseudomorphic Si/GaP Interlayer

Gaas-Based Metal-Insulator-Semiconductor Structures with Low Interface Traps Using Molecular-Beam Epitaxy and Chemical-Vapor-Deposition

Metal-Insulator-Semiconductor Structures on P-Type Gaas with Low Interface State Density

Physical and Electrical Properties of a Si3N4/Si/GaAs Metal–insulator–semiconductor Structure

Physical and electrical properties of a Si 3 N 4 Õ Si Õ GaAs metal – insulator – semiconductor structure

Thermal stability of Si3N4/Si/GaAs interfaces

Study on the AlN/Si(111) interface properties

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Interface Property of Silicon Nitride Films Grown by Inductively Coupled Plasma Chemical Vapor Deposition and Plasma Enhanced Chemical Vapor Deposition on In0.82al0.18as

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures

Study on the AlN/Si Interface Properties

Interface Characteristics of N-N and P-N Ge/SiC Heterojunction Diodes Formed by Molecular Beam Epitaxy Deposition

A Study of Metal-Oxide-Semiconductor Capacitors on Gaas, In0.53ga0.47as, Inas, and Insb Substrates Using A Germanium Interfacial Passivation Layer

Growth and patterning of GaAs/Ge single crystal layers on Si substrates by molecular beam epitaxy