Abstract:AlN is deposited on silicon carbide (SiC) for high-power electronics; in these devices, AlN acts as both a buffer layer for the growth of the active device and a thermal conductor. However, the mechanism of thermal transport through the AlN-SiC interfaces and through grain boundaries of AlN has not been clearly analyzed, even though AlN forms grain boundaries during the deposition process. The thermal properties of the AlN-SiC interface and the inversion domain boundaries (IDBs) of AlN were examined by a phonon transport model based on a nonequilibrium Green function formalism and first-principles calculations. The interface and grain boundary models were designed, and the thermal resistances (TRs) and origins of TR were examined. The TRs of the AlN-SiC interface and the IDB of AlN are much higher than the TRs of AlN and SiC of relevant thickness. Elemental intermixing and vacancy formation were modeled. The formation of charge-balanced defect of VAl + 3ON is thermodynamically favorable compared to other defects, indicating that ON induces formation of VAl. The charge-balanced defect combining VAl and ON increases the TRs of both AlN-SiC interfaces and AlN grain boundaries because vacancy defects induce larger changes in mass than all other defects, and TRs are proportional to changes in mass. In addition, VAl defects are increased by excess ON, resulting in a continuous increase in TR, and then, the calculated thermal boundary resistance (TBR) of the AlN-SiC interface with increased density of VAl by excess ON reaches the experimental TBR. Therefore, it is expected that the large increase in TR by the formation of VAl + ON would be suppressed by controlling the low O density during synthesis.

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Study on the AlN/Si(111) interface properties

Electrical Properties of Al/AlN/Si MIS Structure

Study on the AlN/Si Interface Properties

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Characterization of 4H-Sic Grown on AlN/Si(100) by CVD

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN

Dielectric Properties of AlN Film on Si Substrate

Study of Interface Trap States of AlN-Si(111) Heterostructure*

Interface/Border Trap Characterization Of Al2o3/Aln/Gan Metal-Oxide-Semiconductor Structures With An Aln Interfacial Layer

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

Investigation of the Interface Between LPCVD-SiNx Gate Dielectric and III-nitride for AlGaN/GaN MIS-HEMTs

Thin Film Micro-Scaled Cold Cathode Structures of Undoped and Si-Doped Aln Grown on Sic Substrate with Low Turn-On Voltage

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition

Reduced dislocation density and residual tension in AlN grown on SiC by metalorganic chemical vapor deposition

Photo-assisted Capacitance-Voltage Characterization of High-Quality Atomic-Layer-deposited Al2O3∕GaN Metal-Oxide-semiconductor Structures