Abstract:Au/silicon nitride/In0.82Al0.18As metal insulating semiconductor (MIS) capacitors were fabricated and then investigated by capacitance voltage (C–V) test at variable frequencies and temperatures. Two different technologies silicon nitride (SiNx) films deposited by inductively coupled plasma chemical vapor deposition (“ICPCVD”) and plasma enhanced chemical vapor deposition (“PECVD”) were applied to the MIS capacitors. Fixed charges (Nf), fast (Dit) and slow (Nsi) interface states were calculated and analyzed for the different films deposition MIS capacitors. The Dit was calculated to be 4.16×1013cm−2eV−1 for “ICPCVD” SiNx MIS capacitors, which was almost the same to that of “PECVD” SiNx MIS capacitors. The Dit value is obviously higher for the extended wavelength InxGa1−xAs (x>0.53) epitaxial material as a result of lattice mismatch with substrate. Compared to the results of “PECVD” SiNx MIS capacitors, the Nsi was significantly lower and the Nf was slightly lower for “ICPCVD” SiNx MIS capacitors. X-ray photoelectron spectroscopy (XPS) analysis shows good quality of the “ICPCVD” grown SiNx. The low temperature deposited SiNx films grown by “ICPCVD” show better effect on decreasing the dark current of InxGa1−xAs photodiodes.

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

Electrical characterization of high k-dielectrics for 4H-SiC MIS devices

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Interface Property of Silicon Nitride Films Grown by Inductively Coupled Plasma Chemical Vapor Deposition and Plasma Enhanced Chemical Vapor Deposition on In0.82al0.18as

Investigation of a 4H—SiC metal—insulation—semiconductor structure with an Al2O3/SiO2 stacked dielectric

AlON/SiO2 Stacked Gate Dielectrics for 4H-SiC MIS Devices

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics

Electrical Properties of Al/AlN/Si MIS Structure

Study on the AlN/Si Interface Properties

Study on the AlN/Si(111) interface properties

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

High frequency CV measurements of SiC MOS capacitors

Electrical Properties of Atomic Layer Deposited Aluminum Oxide on Gallium Nitride

Study on the Electrical Degradation of AlGaN/GaN MIS-HEMTs Induced by Residual Stress of SiNx Passivation

Investigation of the Trap States and $v_{\text{th}}$ Instability in LPCVD Si3N4/AlGaN/GaN MIS-HEMTs with an In-Situ Si3N4 Interfacial Layer

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Dielectric Properties of AlN Film on Si Substrate

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS Capacitors at 700 K

Optimized Transport Properties of GaN MISHEMTs with Thin AlN Interlayer