Abstract:In this work, we studied the mechanisms and switching properties of AlGaN/GaN high-electron-mobility-transistors (HEMTs) passivated by amorphous-SiNx and monocrystal-like AlN. The effects of interface traps and polarization charges on current collapse are investigated by TCAD simulations and experimental characterizations. Surface/interface deep levels can be compensated by both shallow donor-like traps (SiNx passivation) and polarization charges (AlN passivation) at passivation/heterostructure interface, but with different levels of effectiveness under fast switching conditions. SiNx-passivation introduces shallow donor-like trap states with short time constant that favors a fast emission of trapped electrons in the access region and suppressed current collapse, but nevertheless exhibits more severe time-dependent recovery of dynamic on-resistance. For AlN passivation, interface traps are compensated by the fixed positive polarization charges and the off-state depletion region (in the 2DEG channel) is formed predominantly by electric-field effect, leading to an immediate accumulation of high channel electron concentration after switching the HEMT devices back to on-state and instant response of drain current to gate and drain bias. The field plate structure is necessary in SiNx-passivated devices for both current collapse suppression and electric field alleviation. With AlN passivation, the field plate can be solely designed for achieving more uniform electric field distribution for gate reliability concern without the concern of current collapse.

Electrical Properties of Al/AlN/Si MIS Structure

Study on the AlN/Si Interface Properties

Study on the AlN/Si(111) interface properties

Study of Interface Trap States of AlN-Si(111) Heterostructure*

Electrical Characterization of MOCVD Grown Single Crystalline AlN Thin Films on 4H-SiC

High-Frequency Capacitance-Voltage Characteristics of Pecvd-Grown SiO2 Mis Structure on GaN and GaN/AL0.4Ga0.6N/GaN Heterostructure

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Influence of the Polarization on Interfacial Properties in Al/SiO2/GaN/Al0.4Ga0.6N/GaN Heterojunction Metal–insulator–semiconductor Structures

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Thin Film Micro-Scaled Cold Cathode Structures of Undoped and Si-Doped Aln Grown on Sic Substrate with Low Turn-On Voltage

AlGaN/GaN heterostructure on Si (111) substrate grown by MOCVD

Dielectric Properties of AlN Film on Si Substrate

AlGaN/GaN MIS-HEMT With AlN Interface Protection Layer and Trench Termination Structure

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Investigation of SiN<i><sub>x</sub></i> and AlN Passivation for AlGaN/GaN High-Electron-Mobility Transistors: Role of Interface Traps and Polarization Charges

Chemical Structures Of Algan/Aln/Si (111) By Mocvd Using Aes And Xps

SAW characteristics of AlN/SiO<inf>2</inf>/3C-SiC layered structure with embedded electrodes

Enhanced Transport Properties In Inalgan/Aln/Gan Heterostructures On Si (111) Substrates: The Role Of Interface Quality

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Observation of Inversion Behaviors Induced by Polarization Effects in GaN∕AlxGa1−xN∕GaN Based Metal-Insulator-semiconductor Structures