Abstract:In this article, we delve into the reliability of various oxide/4H-SiC interfaces when exposed to elevated temperatures and carrier-trapping conditions. Our investigation primarily centers around the impact of different gate dielectric materials on the electrical characteristics of a low breakdown 4H-SiC-based MOSFET. The gate dielectrics under scrutiny include SiO2, Si3N4, AlN, Al2O3, Y2O3, and HfO2. We find that the choice of gate oxide material significantly influences the transistor's performance, with gate oxides possessing higher relative permittivity notably enhancing its characteristics. Among the materials studied, HfO2 emerges as the most promising candidate, demonstrating superior immunity behaviors in the MOSFET. However, the use of HfO2 is associated with increased gate leakage current. To mitigate this drawback, we introduce a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. Interestingly, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, prove effective in preserving the transistor's on-state performance metrics while limiting gate leakage current across the entire range of gate voltages examined. To validate the predictive capabilities of our modeling analysis, we compare our simulation results with experimental data from the literature, and we observe a favorable agreement. This research holds particular significance in applications employing low-power MOSFETs, where reliability and durability are as critical as performance. For instance, in the context of power optimizers for photovoltaic modules, which fall under the category of low-load and low-voltage DC–DC converters, these devices play a pivotal role in enhancing energy generation under challenging environmental conditions while ensuring long-term reliability.

Visualization of Interface Trap Distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS Capacitors at 700 K

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Analysis of the Electrical Properties and Current Transportation Mechanism of a Metal Oxide Semiconductor (MOS) Capacitor Based on HfGdO Gate Dielectrics

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

High-K Gate Dielectric for High-Performance SiC Power MOSFET Technology with Low Interface Trap Density, Good Oxide Lifetime (ttddb≥ 104s), and High Thermal Stability (≥ 800 °C)

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

C-V and J-V Investigation of HfO2/Al2O3 Bilayer Dielectrics MOSCAPs on (100) Β-Ga2o3

Interface Properties Study On Sic Mos With High-Kappa Al2o3 Gate Dielectric

Electrical properties of 4H-SiC MIS capacitors with AlN gate dielectric grown by MOCVD

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Understanding the trap-induced frequency dispersion in the C-V curve of AlGaN/GaN Hetero-Structure

Gasb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited Hfalo As Gate Dielectric

Distribution of Deep-Level Traps at Atomic-Layer-deposited Al2O3/n-GaN Interface

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Comparison of Methods for Accurate Characterization of Interface Traps in GaN MOS-HFET Devices

Effect of Interface and Bulk Traps on Thec–vcharacterization of a LPCVD-SiNx/AlGaN/GaN Metal-Insulator-semiconductor Structure

Exploring High-Temperature Reliability of 4H-SiC MOSFETs: A Comparative Study of High-K Gate Dielectric Materials

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model