Abstract:This paper investigates the capacitance–voltage (C–V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C–V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C–V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C–V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C–V measurement and the photonic high-frequency C–V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C–V measurement. On the other hand, the photonic high-frequency C–V measurement can bypass the leakage problem, and get reliable low-frequency C–V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Direct Measurement of Active Near-Interface Traps in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

Spice modeling of 4H-SiC MOSFET based on the advanced mobility model

Electrical characterization of SiC MOS capacitors: A critical review

Oxide and Interface Defect Analysis of lateral 4H-SiC MOSFETs through CV Characterization and TCAD Simulations

Capacitance-voltage characteristics of a metal-carbon-silicon structure

Quantitative Evaluation of Slow Traps Near Ge Mos Interfaces by Using Time Response of Mos Capacitance

Trap Characterization of Trench-Gate SiC MOSFETs Based on Transient Drain Current

Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

Capacitance–voltage Characterization of Fully Silicided Gated MOS Capacitor

Simulation of Threshold Voltage Instability of 4H-Sic MOSFET

A Study on the Surface Trap Effect on 4H-Sic MESFET's

Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction

The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET