Abstract:The $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface in the termination area is a crucial component in limiting high-temperature reverse-bias (HTRB) reliability for $\mathrm{Si}\mathrm{C}$-based high-voltage devices. However, the atomic structure and carrier-trapping behavior of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects therein and the underlying physical mechanisms of breakdown-voltage (${V}_{\mathrm{BD}}$) variation are still largely unclear. Here, the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defects of 4H-$\mathrm{Si}\mathrm{C}$ gate turn-off (GTO) thyristors before and after HTRB stress are investigated by transient capacitance measurements and density-functional-theory (DFT) calculations. It is found that the bias stress at 4.4 kV enlarges the interface state density at ${E}_{C}\ensuremath{-}0.60$ eV to ${E}_{C}\ensuremath{-}1.33$ eV by electron capturing. As a result, the negative interface charge is generated. As high-resolution transmission electron microscopy reveals the presence of excess carbon near the $\mathrm{Si}\mathrm{C}$ surface, DFT calculations are focused on carbon-related interface defects to clarify the atomic and electronic structures of the $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface trap and assign them to negatively charged excess split-interstitial carbon at the interface. Furthermore, technical computer-aided-design simulation further proves that the negatively charged $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interface defect is the main cause for the observed ${V}_{\mathrm{BD}}$ degradation after the HTRB test, which leads to a strong electric ﬁeld crowding effect. These results not only provide deep physical insights underlying ${V}_{\mathrm{BD}}$ degradation in HTRB-stressed high-voltage devices, but are also of significant importance in the optimizations of device structure and oxidation technology for $\mathrm{Si}\mathrm{C}/{\mathrm{Si}\mathrm{O}}_{2}$ interfaces in high-voltage $\mathrm{Si}\mathrm{C}$ devices.

Dependence of the incorporated boron concentration near SiO2/4H–SiC interface on trap passivation reduction

Investigating the mechanism of SiO 2 /4H-SiC interface traps passivation by boron incorporation through FT-IR analysis of near-interface SiO 2

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Influence of Phosphorus Diffusion on the SiO2/4H-SiC (0001) Interface During Poly Gate Formation Process

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Enhanced Interfacial and Electrical Characteristics of 4H-Sic MOS Capacitor with Lanthanum Silicate Passivation Interlayer

Full Activation of Boron in Silicon Doped by Self-Assembled Molecular Monolayers

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

Boron Spin-On Doping for Poly-Si/SiO x Passivating Contacts

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

The Effect of Bonded Interface on Electrical Properties of Bonded Silicon-on-insulator Wafers

Investigation on boron diffusion effects in buried oxide of Si nanocrystals (Si NCs) embedded Silicon-on-Insulator

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

Electron trapping at SiO2/4H-SiC interface probed by transient capacitance measurements and atomic resolution chemical analysis

Investigation of Reducing Interface State Density in 4H-SiC by Increasing Oxidation Rate

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

A Comparison of Active Near-Interface Traps in Nitrided and As-Grown Gate Oxides by the Direct Measurement Technique

Atomistic Mechanism of 4 H - SiC/SiO2 Interface Carrier-Trapping Effects on Breakdown-Voltage Degradation in Power Devices