Abstract:This paper investigates the capacitance–voltage (C–V) measurement on fully silicided (FUSI) gated metal-oxide-semiconductor (MOS) capacitors and the applicability of MOS capacitor models. When the oxide leakage current of an MOS capacitor is large, two-element parallel or series model cannot be used to obtain its real C–V characteristic. A three-element model simultaneously consisting of parallel conductance and series resistance or a four-element model with further consideration of a series inductance should be used. We employed the three-element and the four-element models with the help of two-frequency technique to measure the Ni FUSI gated MOS capacitors. The results indicate that the capacitance of the MOS capacitors extracted by the three-element model still shows some frequency dispersion, while that extracted by the four-element model is close to the real capacitance, showing little frequency dispersion. The obtained capacitance can be used to calculate the dielectric thickness with quantum effect correction by NCSU C–V program. We also investigated the influence of MOS capacitor's area on the measurement accuracy. The results indicate that the decrease of capacitor area can reduce the dissipation factor and improve the measurement accuracy. As a result, the frequency dispersion of the measured capacitance is significantly reduced, and real C–V characteristic can be obtained directly by the series model. In addition, this paper investigates the quasi-static C–V measurement and the photonic high-frequency C–V measurement on Ni FUSI metal gated MOS capacitor with a thin leaky oxide. The results indicate that the large tunneling current through the gate oxide significantly perturbs the accurate measurement of the displacement current, which is essential for the quasi-static C–V measurement. On the other hand, the photonic high-frequency C–V measurement can bypass the leakage problem, and get reliable low-frequency C–V characteristic, which can be used to evaluate whether the full silicidation has completed or not, and to extract the interface trap density of the SiO2/Si interface.

MOS Capacitor Evaluation of Deep States at the Interfacial Grain Boundary in (110/100) Bonded Si

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Capacitance Transient and Current-/Capacitance-voltage Study of Direct Silicon Bonded (110)∕(100) Interface

Interface States in Gate Stack of Carbon Nanotube Array Transistors.

Electrical Properties of the Bonding Interface in a (110)/(100) Direct-Silicon-Bonded (DSB) Wafer

Deep-Level Transient Spectroscopy Study On Direct Silicon Bonded (110)/(100) Interfacial Grain Boundary

Interface states and nc-Si dots induced charging/discharging effects in floating gate MOS structures

Deep-level Transient Spectroscopy Study on Direct Silicon Bonded (1 1 0)/(1 0 0) Interfacial Grain Boundary

Characterization of Cubic Phase MgZnO/Si(100) Interfaces

Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric

High frequency CV measurements of SiC MOS capacitors

Study of interface-trap and near-interface-state distribution in a 4H-SiC MOS capacitor with the full-distributed circuit model

High Frequency Capacitance–voltage Characterization of Al2O3/ZrO2/Al2O3 in Fully Depleted Silicon-on-insulator Metal–oxide–semiconductor Capacitors

Capacitance–voltage Characterization of Fully Silicided Gated MOS Capacitor

Modulation of Capacitance Magnitude by Charging/Discharging in Silicon Nanocrystals Distributed Throughout the Gate Oxide in MOS Structures

Characterization of Interface and Bulk Traps in Ultrathin Atomic Layer-Deposited Oxide Semiconductor MOS Capacitors With HfO2/In2O3 Gate Stack by C-V and Conductance Method

Investigation of Anomalous Capacitance-Voltage Behavior Caused by Interface Dipoles and the Effect of Post-Metal-annealing

Capacitance-Voltage Characterization of Interfaces Between Positive Valence Band Offset Dielectrics and Wide Bandgap Semiconductors

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Electrical Characteristics of Near-Interface Traps in 3C-Sic Metal–Oxide–Semiconductor Capacitors

Interface Chemistry and Defect State Optimization of the ErSmO/InP Heterojunction Modified by ALD-Driven Al 2 O 3 Interlayers