Abstract:The interface properties and electrical characteristics of the n-type 4H–SiC planar and trench metal–oxide–semiconductor (MOS) capacitors are investigated by measuring the capacitance voltage and current voltage. The flat-band voltage and interface state density are evaluated by the quasi-static method. It is not effective on further improving the interface properties annealing at 1250°C in NO ambient for above 1 h due to the increasing interface shallow and fast states. These shallow states reduce the effective positive fixed charge density in the oxide. For the vertical MOS capacitors on the (112¯0) and (11¯00) faces, the interface state density can be reduced by approximately one order of magnitude, in comparison to the result of the planar MOS capacitors on the (0001) face under the same NO annealing condition. In addition, it is found that Fowler–Nordheim tunneling current occurs at an oxide electric field of 7 MV/cm for the planar MOS device. However, Poole–Frenkel conduction current occurs at a lower electric field of 4 MV/cm for the trench MOS capacitor. This is due to the local field crowded at the trench corner severely causing the electrons to be early captured at or emitted from the SiO2/SiC interface. These results provide a reference for an in-depth understanding of the mobility-limiting factors and long term reliability of the trench and planar SiO2/SiC interfaces.

Impact of in Situ Annealing on the Deep Levels in Ni‐Au/AlN/Si Metal–Insulator–Semiconductor Capacitors

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Impact of the Silicon Substrate Resistivity and Growth Condition on the Deep Levels in Ni-Au/AlN/Si MIS Capacitors

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Improved Si3N4/Si/GaAs Metal-Insulator-semiconductor Interfaces by in Situ Anneal of the As-Deposited Si

Effects of annealing on the interfacial properties and energy-band alignment of AlN dielectric on 4H–SiC

Deep levels in metal-oxide-semiconductor capacitors fabricated on n-type In0.53Ga0.47As lattice matched to InP substrates

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Electrical Properties of Al2O3/ZnO Metal–Insulator–Semiconductor Capacitors

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Effect of post-deposition annealing on charge distribution of metal-oxide-semiconductor capacitor with TiN/HfO2/SiO2/Si gate structure

Interface properties of N2O-annealed NH3-treated 6H-SiC MOS capacitor

The Composition and Interfacial Properties of Annealed AlN Films Deposited on 4H-Sic by Atomic Layer Deposition

Interface Property of Silicon Nitride Films Grown by Inductively Coupled Plasma Chemical Vapor Deposition and Plasma Enhanced Chemical Vapor Deposition on In0.82al0.18as

Al2o3/Inas Metal-Oxide-Semiconductor Capacitors on (100) and (111)B Substrates

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Improved Electrical Performance for SiO2/(3-Ga2O3 (001) MIS Capacitor by Post-Deposition Annealing

Annealing Effect on the Metal Gate Effective Work Function Modulation for the Al/TiN/SiO2/p-Si Structure