Abstract:High-k oxide materials for metal–oxide–semiconductor field-effect transistors and metal–oxide–semiconductor (MOS) structure on SiC have been explored to enhance SiC-based device performance. In our experiments, the MOS capacitors with a high-k barium titanate (BaTiO 3 ) insulating layer were fabricated using the aerosol deposition (AD) method, and post-deposition annealed in O 2 atmospheres. We examined the effects of post-deposition annealing on the BaTiO 3 films and their impact on the surface and electrical characteristics of MOS capacitors. The crystallinity and surface morphologies of the BaTiO 3 films were analyzed by X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy, and atomic force microscopy. We conducted the electrical analysis through current–voltage and capacitance–voltage ( C – V ) measurements. The post-deposition annealing process effectively reduced the gate leakage current of BaTiO 3 /4H-SiC and elevated the rectification ratio from 9.12 × 10 8 to 1.61 × 10 9 . C – V characteristics were measured at 1 MHz to investigate the oxide defect charges inside the MOS capacitors. Near-interface trap density ( ) decreased from 9.10 × 10 11 to 5.53 × 10 11 cm −2 due to post-annealing, which diminished flat band voltage hysteresis. Fixed oxide charge density ( ) also diminished from 4.00 × 10 11 to 3.58 × 10 11 cm −2 , and the oxygen vacancies were compensated by the oxygen atoms introduced from the O 2 during the post-deposition annealing. Our findings suggest that the post-deposition annealed process significantly influences surface and electrical properties during BaTiO 3 thin film deposition using AD.

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

Effects of Annealing Gas on Electrical Properties and Reliability of Ge MOS Capacitors with HfTiON As Gate Dielectric

Effect of Post Oxidation Annealing in Nitric Oxide on Interface Properties of 4H-Sic/sio2 after High Temperature Oxidation

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Effects of sequential annealing in low oxygen partial-pressure and NO on 4H-SiC MOS devices

The Correlation Between the Reduction of Interface State Density at the SiO2/SiC Interface and the NO Post-Oxide-Annealing Conditions

Reliability of 4H-Sic (0001) MOS Gate Oxide by NO Post-Oxide-Annealing

Annealing Influence on Stoichiometry and Band Alignment of 4H-SiC/SiO2 Interface Evaluated by X-ray Photoelectron Spectroscopy

Modification of Band Alignments and Optimization of Electrical Properties of Ingazno Mos Capacitors with High-K Hfoxny Gate Dielectrics

Comparative Study on Slow-State Near Interface Hole Traps in NO and Ar Annealed N-type 4H-Sic MOS Capacitors by Ultraviolet Light

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Investigation of Total Ionizing Dose Radiation Effects on SiC MOSFETs by Modulating the Nitrogen Content in Gate Oxide Processing

Improvement of Interface Properties for Thermally Oxidized SiC/SiO2 MOS Capacitor by Post Oxidation Annealing Treatment

Interfacial electrical and chemical properties of deposited SiO2 layers in lateral implanted 4H-SiC MOSFETs subjected to different nitridations

Effects of Varying Annealing Ambient towards Performance of Ternary GaxCeyOz Passivation Layers for Metal-Oxide-Semiconductor Capacitor

Effects of SiO2 cap annealing on MOS interfaces formed on Mg-doped p-type GaN surface

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

A Highly Efficient Annealing Process with Supercritical N2O at 120 °C for SiO2/4H–SiC Interface

Effects of post-deposition annealing on BaTiO3/4H-SiC MOS capacitors using aerosol deposition method