Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Electrical and Physical Characterization of Gate Oxides on 4H-Sic Grown in Diluted N2O

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Growth of Gate Oxides on 4H–SiC by NO at Low Partial Pressures

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

Comparative Study on Slow-State Near Interface Hole Traps in NO and Ar Annealed N-type 4H-Sic MOS Capacitors by Ultraviolet Light

Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface

Comparison of Charge-Retention Times in N- and P-Type 4H-Sic Mos Capacitors As Non-Volatile Memory Elements

Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation

High Quality Ultrathin Gate Dielectrics Prepared by In-Situ RTP

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement

The Effect of SiO2 Precipitation in Si on Generation Currents in MOS Capacitors

High frequency CV measurements of SiC MOS capacitors