Abstract:NO post-oxidation annealing (POA) processes with different temperatures and durations are simultaneously studied on the n-type and p-type 4H-SiC MOS capacitors. The results from Secondary Ion Mass Spectroscopy (SIMS) reveal that nitrogen diffuses further into the SiO2 layer for the samples annealed at higher temperature (1250 °C). Furthermore, the area densities of nitrogen for the n-type samples are about 1.3 times larger than the p-type samples. The densities of negative effective fixed dielectric charge (Neff) and slow-state electron traps are effectively decreased with increasing annealing time and temperature for the n-type samples. However, the introduced nitrogen leads to more the deep energy-level traps [0.5–0.6 eV above the valence band edge (Ev)] in the p-type samples, which can exchange electrons with near-interface traps in response to the alternating current (AC) signal below 10 kHz. Besides, the densities of the slow-state hole traps, which are obviously increased at low temperature but raised slowly at high temperature, are mainly affected by the temperature of the NO POA process and not only the density of incorporated nitrogen. Therefore, NO annealing at high temperature with a short duration (at 1250 °C 1 h) may be a good choice to optimize NO POA treatment for n-channel 4H-SiC MOSFETs, based on comprehensive consideration of the influence of different NO POA conditions on n-type and p-type MOS capacitors.

Comparison of Charge-Retention Times in N- and P-Type 4H-Sic Mos Capacitors As Non-Volatile Memory Elements

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

Charge Retention in Metal–oxide–semiconductor Capacitors on SiC Used As Nonvolatile-Memory Elements

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC

Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

A P-Channel MOSFET on 4H-SiC

Influence of Various NO Annealing Conditions on N-type and P-type 4H-Sic MOS Capacitors

The effect of charge redistribution on flat-band voltage turnaround in 4H-SiC MOS capacitors

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Comparative Study on Slow-State Near Interface Hole Traps in NO and Ar Annealed N-type 4H-Sic MOS Capacitors by Ultraviolet Light

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement

Toward Long-Term Retention-Time Single-Electron-memory Devices Based on Nitrided Nanocrystalline Silicon Dots

Comparison of Discrete-Storage Nonvolatile Memories: Advantage of Hybrid Method for Fabrication of Au Nanocrystal Nonvolatile Memory

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Numerical Investigation of Characteristics of P-Channel Ge/Si Hetero-Nanocrystal Memory

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices