Abstract:In this work, the reliability of different oxide/4H-SiC interfaces under high temperature and carrier-trapping conditions are investigated carefully. In more detail, the carrier-trapping and temperature effects are considered in the electrical characterization of a low breakdown 4H-SiC-based MOSFET by using in turn SiO2, Si3N4, AlN, Al2O3, Y2O3 and HfO2 as gate dielectric. A gate oxide with a high relative permittivity notably improves the transistor performance. In addition, HfO2 assures the MOSFET best immunity behaviors. The obtained results are explained in terms of the carrier channel mobility, device on-state resistance, and oxide electric field. By using HfO2, however, an increased gate leakage current is calculated. This drawback is overcome by inserting a thin interfacial layer (2 nm-thick) in the HfO2/4H-SiC MOS structure. In particular, two alternative gate stacked dielectrics, involving either SiO2 or Al2O3, have proven their effectiveness in preserving the transistor on-state figures of merit while limiting the gate leakage current in the whole explored gate voltage range. To support the prediction capabilities of the presented modeling analysis, the simulations results are compared with experimental data from literature resulting in a good agreement. Low power MOSFETs are used in several applications for which reliability and durability are as critical as performance. For example, referring to power optimizers for photovoltaic (PV) modules, which fall under the low-load and low-voltage category of DC–DC converters, these devices significantly increase the energy generated by each single PV module operating under harsh conditions and stressing environments. In addition, they have to ensure high reliability over the long term of operation.

A P-Channel MOSFET on 4H-SiC

Lateral Ge/Sige/Si Hetero-Channel P-Type Mosfets

Normally-off trench JFET technology in 4H silicon carbide

4H-SiC trench gate MOSFETs with field plate termination

A comprehensive analysis of breakdown mechanisms in 4H-SiC MOSFET and JFET

Channel Hot-Carrier Effect of 4H-Sic MOSFET

Demonstration of SiC n-channel MOSFETs fabricated on a high-purity semi-insulating substrate and investigation of the short-channel effects

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode

Novel Designed SiC Devices for High Power and High Efficiency Systems

Analysis of 4H-SiC MOSFET with distinct high-k/4H-SiC interfaces under high temperature and carrier-trapping conditions

A New 4H-SiC Trench MOSFET With Improved Reverse Conduction, Breakdown, and Switching Characteristics

Increasing Mobility in 4H-SiC MOSFETs with Deposited Oxide by In-Situ Nitridation of SiC Surface

Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

Implementation of a short channel (0.3 μm) for 4H-SiC MOSFETs with deep P-well using ‘channeling’ implantation

A Novel SiC Trench MOSFET with Self-Aligned N-Type Ion Implantation Technique

The Fabrication and Characterization of 4H-Sic Power Umosfets

Design, Process, and Characterization of Complementary Metal–Oxide–Semiconductor Circuits and Six-Transistor Static Random-Access Memory in 4H-SiC

A New SiC Trench MOSFET Structure With Protruded p-Base for Low Oxide Field and Enhanced Switching Performance

The FinFET effect in lateral 4H-SiC and Silicon multi-gate MOSFETs