Abstract:This article investigates an improved 4H-SiC trench gate metal–oxide–semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a light n-type current spreading layer (NCSL) under the p-body. The n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer, thus improving the specific on-resistance (R on,sp). There are three p-type pillars in the modified structure, with the p-type pillars on both sides playing the same role. The p-type conductive pillars relieve the electric field (E-field) in the corner of the trench bottom. Two-dimensional simulation (silvaco TCAD) indicates that R on,sp of the modified structure, and breakdown voltage (V BR) are improved by 22.2% and 21.1% respectively, while the maximum figure of merit ( FOM=VBR2/Ron,sp ) is improved by 79.0%. Furthermore, the improved structure achieves a light smaller low gate-to-drain charge (Q gd) and when compared with the conventional UMOSFET (conventional-UMOS), it displays great advantages for reducing the switching energy loss. These advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance, which also enables the charge carriers to be extracted quickly. In the end, under the condition of the same total charge quantity, the simulation comparison of gate charge and OFF-state characteristics between Gauss-doped structure and uniform-doped structure shows that Gauss-doped structure increases the V BR of the device without degradation of dynamic performance.

The Fabrication and Characterization of 4H-Sic Power Umosfets

Simulation of a Short-Channel 4H-Sic UMOSFET with Buried P Epilayer for Low Oxide Electric Field and Switching Loss

Novel Designs of 4H-Sic Trench Gate Metal-Oxide-Semiconductor Field Effect Transistors (umosfets) with Low On-Resistance

Improved 4H-Sic UMOSFET with Super-Junction Shield Region

Optimized JFET Regions of 4H-Sic VDMOS with Reduced On-Resistance and Improved Gate Oxide Reliability

4H-SiC UMOSFET With an Electric Field Modulation Region Below P-Body

702.3 A.cm(-2)/10.4 m Omega.cm(2) Vertical beta-Ga2O3 U-Shape Trench Gate MOSFET With N-Ion Implantation

Design Analysis of 4H-SiC MOSFET for High Power Application

High performance 4H-SiC MOSFET with deep source trench

High Temperature Characterization Of 4h-Sic Normally-On Vertical Jfets With Buried Gate And Buried Field Rings

Electrical Characterization and Analysis of 4H-Sic Lateral MOSFET (LMOS) for High-Voltage Power Integrated Circuits

A 4H-SiC semi-super-junction shielded trench MOSFET: p-pillar is grounded to optimize the electric field characteristics

A P-Channel MOSFET on 4H-SiC

Normally-off trench JFET technology in 4H silicon carbide

Evaluation of Trench Oxide Protection Techniques on Ultra High Voltage (10 kV) 4H-SiC UMOSFETs

An Improved 4H-SiC Trench-Gate MOSFET With Low ON-Resistance and Switching Loss

Novel Designed SiC Devices for High Power and High Efficiency Systems

4H-SiC trench gate MOSFETs with field plate termination

702.3 A·cm⁻²/10.4 Mω·cm² Β-Ga₂o₃ U-Shape Trench Gate MOSFET with N-Ion Implantation

A High Performance 4H-Sic Normally-off VJFET

4H–SiC trench MOSFET with Inverted-T groove