Abstract:—With the rapid applications of silicon carbide metal–oxide–semiconductor field-effect transistor (SiC MOSFET) power devices, further improving the performance of SiC MOSFET device through enhancing its gate oxide reliability is one of the crucial directions. The density of interface states in a SiC MOSFET is a significant parameter that affects the reliability of the gate oxide layer. In this paper, the SiC MOS capacitors (MOSCAPs) were prepared by the 1250 °C dry oxidation and 1350 °C NO annealing process. Then, we analyzed the mechanisms of the breakdown by two group of ramped experiment. And we still evaluated the reliability of oxide layer via the high-temperature time-dependent dielectric breakdown (TDDB) tests on the prepared MOSCAPs, meanwhile, the temperature effect on the reliability was considered. Furthermore, the E , 1/ E , and E models with Weibull plotting were used to calculate the t BD lifetimes and failure analysis was carried on the failed samples finally. The results indicate that: (1) the impact of the generation and accumulation of the traps in the oxide, which is the main mechanisms of device failure; (2) The prediction of lifetime was calculated with three models at different acceleration factors; (3) at high-temperature, although the lower the density of interface states is, the Si epitaxial growth and C cluster will manifest in the oxide surface and lead to the breakdown of SiC MOSCAPs.

Characterization of Non-Equilibrium Charge of MOS Capacitors on P-Type 4H SiC

Comparison of Charge-Retention Times in N- and P-Type 4H-Sic Mos Capacitors As Non-Volatile Memory Elements

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Investigation of Electron-Hole Generation in MOS Capacitors on 4H SiC

Investigation of Ultralow Leakage in MOS Capacitors on 4H SiC

The effect of charge redistribution on flat-band voltage turnaround in 4H-SiC MOS capacitors

Electrical characterization of SiC MOS capacitors: A critical review

High frequency CV measurements of SiC MOS capacitors

A P-Channel MOSFET on 4H-SiC

Comprehensive Investigation of Gate Oxide Instability in 4H-SiC MOSFETs and MOS Capacitors Under High Gate Bias Stress

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

A 4H-SiC Trench MOS Capacitor Structure for Sidewall Oxide Characteristics Measurement

Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure

A Temperature Independent Effect of Near-Interface Traps in 4H-Sic MOS Capacitors

Quantified Density of Active Near Interface Oxide Traps in 4H-Sic MOS Capacitors

The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

Energy-Localized Near-Interface Traps Active in the Strong-Accumulation Region of 4H-Sic MOS Capacitors

High-temperature time-dependent dielectric breakdown of 4H-SiC MOS capacitors

Charge Retention in Metal–oxide–semiconductor Capacitors on SiC Used As Nonvolatile-Memory Elements

Gate Oxide Long-Term Reliability of 4H-Sic Mos Devices