Abstract:Silicon is a promising substrate for GaN growth due to its low cost, large size and potential applications in the integration of optoelectronic and microelectronic devices. However, a high lattice (~17%) and thermal (~56%) mismatch between Si substrate and GaN epilayer causes large tensile stress and leads to the formation of cracks when the GaN layer thickness is above 1.0 μm during the cooling down to room temperature. Therefore, the growth of high quality and crack-free GaN layers on silicon substrates is still a challenging issue. It has been widely reported that cracking problem can be mitigated by using techniques like low-temperature (LT) AlN interlayers, AlxGa1-xN transition layer, thin SixNy interlayers, AlN/GaN superlattices, etc. In this work, we used the LT-AlN interlayers for strain engineering during the growth of GaN layers by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on Si(111) substrates. And we investigated the fluence of the thickness of LT-AlN interlayers, which is considered as one of the most important factors in reducing tensile stress and controlling density of micro-cracks in GaN layer. Optical microscopy, atomic force microscopy, X-ray diffraction and Raman spectrum were employed to characterize these samples of GaN epilayers. The results demonstrate that the crystal quality of GaN depends strongly on the thickness of the epilayers, and crack-free GaN layers with thickness exceeding 1.5 μm can be achieved by using LT-AlN interlayers with an optimized thickness.

Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Reduction of tensile stress in GaN grown on Si(1 1 1) by inserting a low-temperature AlN interlayer

Reduction Of Tensile Stress In Gan Grown On Si(111) By Inserting A Low-Temperature Aln Interlayer

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

The Influence of AlN/GaN Superlattice Intermediate Layer on the Properties of GaN Grown on Si (111) Substrates

Effects of AlN interlayer on growth of GaN-based LED on patterned silicon substrate

Crack-free GaN grown by MOCVD on Si(111)

Effect of AlGaN Nucleation Layer on the Stress and Dislocation of the GaN Film Grown on SiC Substrate

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Role of an Ultra-Thin Aln/Gan Superlattice Interlayer on the Strain Engineering of Gan Films Grown on Si(110) and Si(111) Substrates by Plasma-Assisted Molecular Beam Epitaxy

High quality crack-free GaN film grown on si (111) substrate without AlN interlayer

Effect of Thickness on the Microstructure of GaN Films on Al2O3(0001) by Laser Molecular Beam Epitaxy

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate