Abstract:Silicon is a promising substrate for GaN growth due to its low cost, large size and potential applications in the integration of optoelectronic and microelectronic devices. However, a high lattice (~17%) and thermal (~56%) mismatch between Si substrate and GaN epilayer causes large tensile stress and leads to the formation of cracks when the GaN layer thickness is above 1.0 μm during the cooling down to room temperature. Therefore, the growth of high quality and crack-free GaN layers on silicon substrates is still a challenging issue. It has been widely reported that cracking problem can be mitigated by using techniques like low-temperature (LT) AlN interlayers, AlxGa1-xN transition layer, thin SixNy interlayers, AlN/GaN superlattices, etc. In this work, we used the LT-AlN interlayers for strain engineering during the growth of GaN layers by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on Si(111) substrates. And we investigated the fluence of the thickness of LT-AlN interlayers, which is considered as one of the most important factors in reducing tensile stress and controlling density of micro-cracks in GaN layer. Optical microscopy, atomic force microscopy, X-ray diffraction and Raman spectrum were employed to characterize these samples of GaN epilayers. The results demonstrate that the crystal quality of GaN depends strongly on the thickness of the epilayers, and crack-free GaN layers with thickness exceeding 1.5 μm can be achieved by using LT-AlN interlayers with an optimized thickness.

Crack-free GaN grown by MOCVD on Si(111)

Reduction Of Tensile Stress In Gan Grown On Si(111) By Inserting A Low-Temperature Aln Interlayer

Crack-Free GaN MOCVD Growth on 100 mm Silicon Substrate

Reduction of tensile stress in GaN grown on Si(1 1 1) by inserting a low-temperature AlN interlayer

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Crack-free Al 0.5 Ga 0.5 N Epilayer Grown on SiC Substrate by in Situ SiN X Interlayer

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Growth of crack-free AlGaN film on thin AlN interlayer by MOCVD

Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD

GaN grown on Si(111) with step-graded AlGaN intermediate layers

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Crack-free InAlGaN Quaternary Alloy Films Grown on Si(111) Substrate by Metalorganic Chemical Vapor Deposition

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Crack-free Thick AlGaN Grown on Sapphire Using AlN/AlGaN Superlattices for Strain Management

Growth of GaN on Si(111) by inserting δAl/AlN buffer layer

The Influence of AlN/GaN Superlattice Intermediate Layer on the Properties of GaN Grown on Si (111) Substrates

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Suppression of Stress and Cracks in the Epitaxy of AlN by MOCVD Through a Hexagonal BN Nucleation Layer

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates