Abstract:The dislocation density in AlGaN epitaxial layers with Al content as high as 45% grown on sapphire substrates has been effectively reduced by introducing an in-situ deposited SiNx nanomask layer in this study. By closely monitoring the evolution of numerous material properties, such as surface morphology, dislocation density, photoluminescence, strain states, and electron mobility of the Si-Al0.45Ga0.55N layers as the functions of SiNx interlayer growth time, the surface coverage fraction of SiNx is found to be a crucial factor determining the strain states and dislocation density. The dependence of the strain states and the dislocation density on the surface coverage fraction of SiNx nanomask supports the very different growth models of Al-rich AlGaN on SiNx interlayer due to the reduced nucleation selectivity compared with the GaN counterpart. Compared with GaN, which can only nucleate at open pores of SiNx nanomask, Al-rich AlGaN can simultaneously nucleate at both open pores and SiNx covered areas. Dislocations will annihilate at the openings due to the 3D growth initiated on the opening area, while 2D growth mode is preserved on SiNx and the threading dislocations are also preserved. During the following growth process, lateral overgrowth will proceed from the Al0.45Ga0.55N islands on the openings towards the regions covered by SiNx, relaxing the compressive strain and bending the dislocations at the same time. (C) 2014 AIP Publishing LLC.

Crack-free Al 0.5 Ga 0.5 N Epilayer Grown on SiC Substrate by in Situ SiN X Interlayer

Improvement of Quality and Strain Relaxation of GaN Epilayer Grown on SiC Substrate by in Situ SiNx Interlayer

Crack-free GaN grown by MOCVD on Si(111)

Improvements of Epitaxial Quality and Stress State of GaN Grown on SiC by in Situ SiNx Interlayer

High quality crack-free GaN film grown on si (111) substrate without AlN interlayer

SiNx thickness dependent morphology and mechanical properties of CrAlN/SiNx nanomultilayers

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Crack-Free GaN MOCVD Growth on 100 mm Silicon Substrate

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Crack-free Thick AlGaN Grown on Sapphire Using AlN/AlGaN Superlattices for Strain Management

Defect Reduction In Si-Doped Al0.45ga0.55n Films By Sinx Interlayer Method

Crystallization of Amorphous SiC and Superhardness Effect in CrAlN/SiC Nanomultilayered Films

Crack-free high quality 2 μm-thick Al0.5Ga0.5N grown on a Si substrate with a superlattice transition layer

High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition

Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

High quality 10.6 <i>μ</i>m AlN grown on pyramidal patterned sapphire substrate by MOCVD

Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering

Crack-free InAlGaN Quaternary Alloy Films Grown on Si(111) Substrate by Metalorganic Chemical Vapor Deposition

Crack-free 2.2 μm-thick GaN grown on Si with a single-layer AlN buffer for RF device applications