Homogeneous Epitaxial Growth of AlN Single-Crystalline Films on 2 Inch-Diameter Si (111) Substrates by Pulsed Laser Deposition

Hui Yang,Wenliang Wang,Zuolian Liu,Guoqiang Li
DOI: https://doi.org/10.1039/c3ce40886h
IF: 3.756
2013-01-01
CrystEngComm
Abstract:Homogeneous and crack-free AlN films have been epitaxially grown on 2 inch Si (111) substrates by pulsed laser deposition (PLD). By optimising the laser rastering and PLD growth conditions, the 2 inch-diameter single-crystalline AlN films exhibit excellent thickness uniformity with a root-mean-square (RMS) inhomogeneity of less than 3.6% and a very smooth surface with a RMS roughness of 1.4 nm. There is a 1.5 nm-thick interfacial layer between the as-grown AlN films and Si substrates, which is confirmed by HRTEM and a GIXR simulation, and the as-grown AlN films are almost fully relaxed with only 0.3% in-plane tensile strain. The achievement of high-quality and crack-free AlN films with a uniform thickness and abrupt interface on 2 inch Si (111) substrates is of great interest for AlN-based devices, particularly acoustic filters, where abrupt heterointerfaces with the substrates and flat surfaces of AlN films are highly desired.
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