Abstract:High-quality GaN films on nanoscale patterned sapphire substrates (NPSSs) are required for micro-light-emitting diode (micro-LED) display. In this study, two types of nucleation layers (NLs), including in situ low-temperature grown GaN (LT-GaN) and ex situ physical vapour deposition AlN (PVD-AlN), are applied on cone-shaped NPSS. The coalescence process of GaN grains on the NPSS is modulated by adjusting the three-dimensional (3D) growth temperatures. Results show that low 3D temperatures help to suppress the Ostwald ripening of GaN grains on the NPSS, facilitating the uniform distribution of 3D GaN grains. Higher 3D temperatures lead to a decrease in the edge dislocation density, accompanied by an increase in residual compressive stress. Compared with LT-GaN NLs, PVD-AlN NLs can effectively improve the growth uniformity, suppress the tilting and twisting of GaN grains grown on NPSSs, and promote the orientation consistency of crystal facets during coalescence. The GaN films grown on NPSSs with PVD-AlN NLs exhibit a decrease in the coalescence time from 2000 s to 500 s, a reduction in dislocation densities from 2.8 x 108 cm-2 to 1.4 x 108 cm-2, and an increase in the residual compressive stress from 0.98 GPa to 1.41 GPa compared to those grown on LT-GaN NLs. This study elucidates trends in dislocation and stress evolution in GaN films on NPSSs with analysis of grain coalescence. The effect of grain coalescence on the dislocation and stress in GaN films grown on nanoscale patterned sapphire substrates with low-temperature grown GaN and physical vapour deposition AlN nucleation layers is comparably investigated.

Effect of AlGaN Nucleation Layer on the Stress and Dislocation of the GaN Film Grown on SiC Substrate

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

Effect of the N/Al Ratio of AlN Buffer on the Crystal Properties and Stress State of GaN Film Grown on Si(111) Substrate

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Effect of Grain Coalescence on Dislocation and Stress Evolution of GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Effects of the thickness of low-temperature AlN interlayers on GaN layers grown on Si(111) substrates by MOCVD

Effect of Grain Coalescence on Dislocation and Stress in GaN Films Grown on Nanoscale Patterned Sapphire Substrates

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Improvements of Epitaxial Quality and Stress State of GaN Grown on SiC by in Situ SiNx Interlayer

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE

The Influence of AlN/GaN Superlattice Intermediate Layer on the Properties of GaN Grown on Si (111) Substrates

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Reduction of tensile stress in GaN grown on Si(1 1 1) by inserting a low-temperature AlN interlayer

Effect of AlN Nucleation Layer on the Structural Properties of Bulk GaN Grown on Sapphire by Molecular-Beam Epitaxy

Effect of Growth Temperature of AlN Interlayers on the Properties of GaN Epilayers Grown on C‐plane Sapphire by Metal Organic Chemical Vapor Deposition

Significantly Reduced In-Plane Tensile Stress of GaN Films Grown on SiC Substrates by Using Graded AlGaN Buffer and SiNx Interlayer