Abstract:Comparative study of high and low temperature AlN interlayers and their roles in the properties of GaN epilayers prepared by means of metal organic chemical vapour deposition on (0001) plane sapphire substrates is carried out by high resolution x-ray diffraction, photoluminescence and Raman spectroscopy. It is found that the crystalline quality of GaN epilayers is improved significantly by using the high temperature AlN interlayers, which prevent the threading dislocations from extending, especially for the edge type dislocation. The analysis results based on photoluminescence and Raman measurements demonstrate that there exists more compressive stress in GaN epilayers with high temperature AlN interlayers. The band edge emission energy increases from 3.423 eV to 3.438 eV and the frequency of the Raman shift of E(2) (TO) moves from 571.3 cm(-1) to 572.9 cm(-1) when the temperature of AlN interlayers increases from 700 degrees C to 1050 degrees C. It is believed that the temperature of AlN interlayers effectively determines the size, the density and the coalescence rate of the islands, and the high temperature AlN interlayers provide large size and low density islands for GaN epilayer growth and the threading dislocations are bent and interactive easily. Due to the threading dislocation reduction in GaN epilayers with high temperature AlN interlayers, the approaches of strain relaxation reduce drastically, and thus the compressive stress in GaN epilayers with high temperature AlN interlayers is high compared with that in GaN epilayers with low temperature AlN interlayers.

Effect of Growth Temperature of AlN Interlayers on the Properties of GaN Epilayers Grown on C‐plane Sapphire by Metal Organic Chemical Vapor Deposition

Comparative Study of Different Properties of GaN Films Grown on (0001) Sapphire Using High and Low Temperature AlN Interlayers

Influence of the Growth Temperature of the High-Temperature AlN Buffer on the Properties of GaN Grown on Si(1 1 1) Substrate

The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

Influence of the Aln Interlayer Crystal Quality on the Strain Evolution of Gan Layer Grown on Si (111)

The Effects of Growth Temperature of AlN Buffer Layers Ona-Plane GaN Grown Onr-Plane Sapphire by MOCVD

A Low-Temperature Aln Interlayer to Improve the Quality of Gan Epitaxial Films Grown on Si Substrates

Effect of AlN Nucleation Layer on the Structural Properties of Bulk GaN Grown on Sapphire by Molecular-Beam Epitaxy

Influence of the Growth Temperature of AlN Buffer on the Quality and Stress of GaN Films Grown on 6h–sic Substrate by MOVPE

Effects of Growth Temperature on Structural and Electrical Properties of Inaln/Gan Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition on C-Plane Sapphire

The Effect of Single AlGaN Interlayer on the Structural Properties of GaN Epilayers Grown on Si (111) Substrates

Effect of high temperature AlN interlayer on the performance of AlGaN/GaN properties

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

The Effects of Growth Temperature of the Pulse Atomic Layer Epitaxy AlN Films Grown on Sapphire by MOCVD

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

The Effects of LT AlN Buffer Thickness on the Properties of High Al Composition AlGaN Epilayers

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy

Epitaxial Growth of AlN Films on Sapphire Via a Multilayer Structure Adopting a Low- and High-Temperature Alternation Technique