Abstract:Sc0.18Al0.82N/GaN with state-of-the-art x-ray diffraction figures of merit grown by metal modulated epitaxy under metal-rich conditions and a low substrate temperature of 400 °C is demonstrated to have improved crystalline order [250 arc sec for the (0002) reflection and 469 arc sec for the (101 ̄5)] compared to a previous state-of-the-art sample grown at a more conventional temperature of 650 °C. While both samples show a columnar structure, the higher substrate temperature sample has a good symmetric rocking curve (RC) of 229 arc sec, but unlike the lower temperature sample, the RC of the (101 ̄5) asymmetric reflection could not be measured, indicating a more columnar structure common among ScAlN films. Local lattice constant maps (LLCMs) from 4D-STEM depict abrupt strain relaxation within ∼2 nm from the ScAlN/GaN interface for the sample grown at Tsub = 400 °C. Since these LLCMs suggest a lattice mismatch in the a-lattice constant, and since the films show a sudden roughening, the composition for lattice match to GaN may be less than the accepted 18%–20% Sc, consistent with the average GaN lattice match from lattice constant values reported in the literature of 12%. Compared to traditional III-Nitrides, ScAlN films have substantially more screw and mixed-type threading dislocations, suggesting substantial shear forces that result in significant twist and distortion leading to orthorhombic diffraction patterns as viewed from plan-view TEM in the Tsub = 650 °C sample. These results offer the possibility of ScAlN integration into low-thermal-budget processes including CMOS but further indicate that structural understanding of ScAlN remains lacking.

Effects of Growth Temperature on Structural and Electrical Properties of Inaln/Gan Heterostructures Grown by Pulsed Metal Organic Chemical Vapor Deposition on C-Plane Sapphire

Growth of Ingan and Double Heterojunction Structure with Ingan Back Barrier

The Effect of Growth Temperature on the Electrical-Properties of Alinas/Inp Grown by Molecular-Beam Epitaxy and Metal-Organic Chemical-Vapor-Deposition

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Optimization for the growth condition of in situ SiN x cap layer on ultrathin barrier InAlGaN/GaN heterostructures by metal-organic chemical vapor deposition

Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar ( 11 2 ̄ 2 ) AlGaN films

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Influence of Ultrathin AlN Interlayer on the Microstructure and the Electrical Transport Properties of AlxGa1−xN/GaN Heterostructures

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Ni Diffusion and Its Influence on Electrical Properties of AlxGa1−xN∕GaN Heterostructures

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

Effects of AlN and AlGaN interlayer on properties of InAlN/GaN heterostructures

Influence of Growth Temperature on Properties of Algainn Quaternary Epilayers

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Influence of V/III Flux Ratio on Electrical Properties of AlInGaN/Gan Heterostructures Grown by MOCVD

Growth and Characterization of Modulation-Doped Alxga1-Xn/Gan Heterostructures

Improved crystallographic order of ScAlN/GaN heterostructures grown at low temperatures under metal rich surface conditions

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Electrical Properties of GaN-based Heterostructures Adopting InAlN/AlGaN Bilayer Barriers