Abstract:InN materials have been attracting a lot of attention for its prominent application in electronic and optical devices,compared with GaN and AlN,InN has smaller effective mass and higher electron drift velocity.However,the growth difficulties due to low growth temperature and lack of lattice-matched substrate restricted the evolution of InN-based devices,more and more efforts are made in efficiently deposit InN films with better quality.InN films were synthesized on the(0001) sapphire substrates at different growth temperatures by metal organic chemical vapor deposition(MOCVD),the growth source materials are trimethylindium(TMI),trimethylgallium(TMG) and ammonia(NH3).The physical properties of the films were characterized by a series of measurements.We fully studied the characteristic of InN films by various methods,such as X-ray diffraction(XRD),atomic force microscope(AFM),X-ray photoelectron spectroscopy(XPS) and Raman measurements.It's well known that the growth temperature is one of the most important parameters in growth of InN films,so in our study,we focus our attention mainly on the effect of growth temperature.It was found that 600 ℃ is a suitable growth temperature for InN films,the suitable temperature can inhibit the surface segregation phenomenon of In on the surface of InN films.But at a lower or higher temperature it will lead to a surface segregation of In on the InN films.The crystalline quality and morphology of the surface for the sample without surface segregation have been improved compared with the samples with surface segregation.In addition,it was also found that the residual strain in InN films increased with increasing growth temperature by Raman analysis,the E2(high) model frequency shift toward high frequency with increasing growth temperature,and this shift is due to the presence of residual thermal strain in the InN film.When the growth temperature is lower,the residual thermal strain came into being due to the different thermal expand coefficient between the epitaxial-film and the sapphire substrate.The residual thermal strain is biaxial strain,which can be expressed as:εxx=(Tg-Tr)(αsub-αfilm),Tg,Tr are the growth and room temperature,αsub,αfilm are the thermal expand coefficient of sapphire substrate and InN film,respectively.The relation between E2(high) model frequency and residual thermal strain can be expressed as:ω=20εxx+479(cm-1),which fit from the result of Raman analysis,where ω is the E2(high) model frequency,and εxx is the residual biaxial thermal strain.

Influence of Growth Temperature on Properties of Algainn Quaternary Epilayers

Growth Temperature Effect on the Optical and Material Properties of AlxInyGa1−x−yN Epilayers Grown by MOCVD

Epitaxial growth of semi-polar (11–22) plane AlInGaN quaternary alloys on m-plane (10-10) sapphire substrates

Influence of growth rate on structural and optical properties of AlInGaN quaternary epilayers

The Effect of Growth Temperature on the Electrical-Properties of Alinas/Inp Grown by Molecular-Beam Epitaxy and Metal-Organic Chemical-Vapor-Deposition

The Effect of Growth Temperature on InAs Quantum Dots Grown by MOCVD

Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content

The Growth Temperatures Dependence of Optical and Electrical Properties of Inn Films

Influence of the temperature on growth by ammonia source molecular beam epitaxy of wurtzite phase ScAlN alloy on GaN

Morphology And Microstructure Evolution Of Alxga1-Xn Epilayers Grown On Gan/Sapphire Templates With Aln Interlayers Observed By Transmission Electron Microscopy

Optical and Structural Properties of Aluminum Nitride Epi-Films at Room and High Temperature

Study on In Segregation in InN Films Grown by Metal-organic Chemical Vapor Deposition

The growth temperature dependence of In aggregation in two-step MOCVD grown InN films on sapphire

Material Properties of Mocvd Grown Algan Layers Influenced by Indium-Incorporation

MOCVD growth and annealing characteristics of Mg-doped AlGaN films

The influence of temperature of nitridation and AlN buffer layer on N-polar GaN

Influence of Growth Temperatures on the Quality of InGaAs/GaAs Quantum Well Structure Grown on Ge Substrate by Molecular Beam Epitaxy

Effects of Growth Temperature on the Structural and Optical Properties of 1.6μm GaInNAs∕GaAs Multiple Quantum Wells

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques