Abstract:Journal of Vacuum Science &Technology A, Volume 40, Issue 4, July 2022. Given the recent increase in the demand for gallium nitride (GaN) in different markets like optoelectronics and power devices, the request for epitaxially grown GaN will further increase. To meet this high demand, higher throughput and more economical manufacturing technologies must be advanced. In this work, GaN thin films are deposited by reactive sputter deposition from a liquid gallium target at a substrate temperature of 900 °C. The layers are grown epitaxially on c-plane oriented sapphire in an industrial-scale sputter tool from Evatec AG. Due to the growth rate of >1 nm/s and the fast substrate heat-up time, the throughput in a production setup can be increased compared to other GaN growth techniques. The resistivity of the intrinsic insulating GaN can be lowered by intentional Si doping during the sputter deposition process by three orders of magnitude. Thereby, conductive n-type GaN can be grown with different dopant amounts. The carrier mobility of the sputter deposited film is 45 cm2 V−1 s−1 at a carrier concentration of 1.1 × 1020 cm−3 based on room temperature Hall measurements using a van der Pauw geometry. The lowest resistivity reaches 1300 μΩ cm, which is confirmed by sheet resistance measurements. Undoped films exhibit an x-ray diffraction rocking curve full width at half maximum of 0.2°, which increases up to 0.5° for highly Si-doped layers. The presented results show that GaN prepared by reactive sputter deposition from a liquid gallium source is a viable alternative to conventional deposition techniques for GaN.

Thick GaN Layer Grown by Ga Vapor Transport Technique

Bulk GaN Growth by Ga Sublimation and Vapor Transport Technique

Bulk GaN Growth by Gallium Vapor Transport Technique

Rapid Growth of Bulk Gan Crystal Using Gan Powder As Source Material

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Growth and Characterization of Bulk GaN by Ga Vapor Transport

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

Hydride vapor phase epitaxial growth of thick GaN layers with in-situ optical monitoring

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Thermodynamic and kinetic study of transport and reaction phenomena in gallium nitride epitaxy growth

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Conductive n-type gallium nitride thin films prepared by sputter deposition

Gradual Variation Method for Thick GaN Heteroepitaxy by Hydride Vapour Phase Epitaxy

Growth of GaN Film on Graphene by HVPE

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire with a Combined Buffer Layer by HVPE

Synthesis And Properties Of Hvpe Nitride Substrates

Numerical Study Of Transport And Reaction Phenomena In Gan Vapor Phase Epitaxy

Highly Uniform Growth of 2-Inch GaN Wafers with a Multi-Wafer HVPE System