Abstract:In this paper, the processing parameters of growing GaN epilayer by hydride vapor phase epitaxy are optimized The influences of the low-temperature (LT) nucleation layer growth time, WM precursor ratio and the growth temperature on GaN layer are investigated by the high-resolution X-ray diffraction (HRXRD) signature for the asymmetric and symmetric reflections. The investigation finds that the LT-nucleation layer not only supplies the nucleation centers having good crystal quality, but also promotes the lateral growth of the sequent high temperature (HT) growth. The optimal LT nucleation layer growth time, WEI precursor ratio and the growth temperature can effectively enhance lateral growth to reduce the crystal defects and are favorable to converting the growth mechanism from threedimension to two-dimension in HT growth. The structural and optoelectronic properties of the as-grown GaN layer with a thickness of 15 um at the optimal parameters are studied by scanning electron microcopy, atomic force microscopy (AFM), HRXRD, Raman spectra, and photoluminescence (PL) measurements. X-ray rocking curves show that the full widths at half maximum of (002) and (102) are 317 and 343 arcsec, respectively. The surface roughness (rms: root mean square) is 0.334 nm detected using AFM. These characteristics show that the sample has good lattice quality and smooth surface morphology. In PL spectrum, the near band edge emission is dominated by emission from excitons bound to neutral donors (D X) near 3.478 eV with 11 meV blue-shift and the yellow band emission is very weak. The results indicate that the GaN layer has good crystal quality and excellent optoelectronic properties, but a little biaxial in-plane compressive strain also exists in it due to the lattice and thermal mismatch.

Growth and impact of intrinsic interlayers in high temperature vapor phase epitaxy of GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Growth of compositionally uniform $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with low relaxation degree on GaN by molecular beam epitaxy

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Structural Characterization of GaN Single Crystal Layers Grown by Vapor Transport from a Gallium Oxide (ga 2 O 3 ) Powder Source

Thick GaN Layer Grown by Ga Vapor Transport Technique

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

The effect of the first GaN monolayer on the nitridation damage of molecular beam epitaxy grown GaN on GaAs(001)

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

X-ray Characterization of GaN Single Crystal Layers Grown by the Ammonothermal Technique on HVPE GaN Seeds and by the Sublimation Technique on Sapphire Seeds

Effects of InGaN-interlayer on Closed Stripes of GaN Grown by Serpentine Channel Patterned Sapphire Substrate

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

New Design of Nozzle Structures and Its Effect on the Surface and Crystal Qualities of Thick GaN Using a Horizontal HVPE Reactor

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Electrical properties and structural optimization of GaN/InGaN/GaN tunnel junctions grown by molecular beam epitaxy

Van Der Waals Coherent Epitaxy of GaN and InGaN/GaN Multi-Quantum-well Via a Graphene Inserted Layer

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy