Abstract:The growth process is crucial to achieve large-sized and high-quality aluminum nitride (AlN) crystals through the physical vapor transport (PVT) method. To investigate the influence of parameters on the growth of AlN crystals, a series of quasi-steady numerical simulations on the temperature distribution, growth rate, and partial pressure of Al vapor inside the growth cell were conducted based on a self-developed finite element mass transfer module in the COMSOL package, which considers the partial pressure of gas phases, for different growth temperatures and crucible positions. The simulation results show that increasing the growth temperature significantly augments the partial pressure of Al vapor and the growth rate in the growth cell. Simultaneously, variation of the crucible position substantially alters the temperature distribution and the transport direction of Al vapor inside the crucible. A novel heat sink on the top of the crucible was designed to impair the phenomenon of uneven crystal growth on the surface of the seed caused by the nonuniform radial temperature distribution. Compared to the original crucible, the radial temperature gradient of the optimized crucible was reduced by 37%, and the uniformity of seed surface growth was improved by 89%. This work guides the design of a novel crystal growth furnace and the preparation of high-quality AlN single crystals by the PVT method.

Thermal Environment Evolution and Its Impact on Vapor Deposition in Large Diameter AlN Bulk Growth

Effect of thermal environment evolution on AlN bulk sublimation crystal growth

Modeling and simulation of AlN bulk sublimation growth systems

Design and Optimization of an Aluminum Nitride Sublimation Growth System

Transport phenomena in an aluminum nitride induction heating sublimation growth system

A Thermal Transport And Non-Equilibrium Deposition Model In Aln Sublimation Growth Process

Influence of Temperature Field Distribution on the Growth of Aluminum Nitride Crystal by Simulation Technology

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Modeling of Multi-Species Transfer During Aluminum Nitride Vapor Growth

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

Modeling of Gas Phase and Surface Reactions in an Aluminum Nitride Growth System

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Numerical Simulation of Β-Ga2o3 Single Crystal Growth by Czochralski Method with an Insulation Lid

Modeling of Aluminum Nitride Growth by Halide Vapor Transport Epitaxy Method

A novel method to increase the growth rate in sublimation crystal growth of advanced materials

The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation

Design of an RF-Heated Bulk AlN Growth Reactor: Induction Heating and Heat Transfer Modeling

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating