Abstract:In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (Tg) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the Tg, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the Tg is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, Tg is elevated to near transition temperature (Ttran) to continue AlN single crystal growth at a proper rate for a long time, where Ttran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.

A novel method to increase the growth rate in sublimation crystal growth of advanced materials

Novel Method for High Speed SiC Vapor Growth

Increase of SiC sublimation growth rate by optimizing of powder packaging

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

A Thermal Transport And Non-Equilibrium Deposition Model In Aln Sublimation Growth Process

Design and Optimization of an Aluminum Nitride Sublimation Growth System

Effect of thermal environment evolution on AlN bulk sublimation crystal growth

Modeling and simulation of AlN bulk sublimation growth systems

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Isotropic and Anisotropic Growth Models for the Sublimation Vapour Transport Process

Transport phenomena in an aluminum nitride induction heating sublimation growth system

Effects of Solution Height and Crystal Rotation on the Solution Flow Behavior in the Top-Seeded Solution Growth of SiC Single Crystals

Thermal Environment Evolution and Its Impact on Vapor Deposition in Large Diameter AlN Bulk Growth

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Sublimation Growth of Aluminum Nitride on Silicon Carbide Substrate with Aluminum Nitride–silicon Carbide Alloy Transition Layer

Surface Control of AlN Single Crystal Growth on SiC Substrate

Modeling of Aluminum Nitride Growth by Halide Vapor Transport Epitaxy Method

Influence of Temperature Field Distribution on the Growth of Aluminum Nitride Crystal by Simulation Technology