Abstract:We propose a facile and continuous direct nitridation method for synthesizing fine aluminum nitride (AlN) particles using a drop tube furnace. Aerosolized Al powder as the raw material was continuously supplied through the top of the furnace together with N2 as a carrier gas. Once in the furnace, the Al powder reacted with the N2 to form AlN. A particular advantage of this process is that it allows the continuous synthesis of fine AlN particles. In this study, either a mullite (Al2O3–SiO2) or an alumina tube was used to fabricate the furnace, and the products were collected in a crucible placed at the bottom. Upon heating the mullite tube from 1200 to 1400°C, AlN was formed once the temperature exceeded 1250°C, and its product content increased with temperature. When the flow rate of the N2 carrier gas was decreased from 4 to 2 L min−1, the amount of AlN formed increased due to the increased residence time in the reactor. The morphology of the particles obtained was radially aligned nanofibers with droplets on the tips of the fibers. Transmission electron microscopy revealed that the Si in the mullite tube reacted with Al to form eutectic Al–Si droplets on the Al surface, in which these droplets acted as a catalyst of vapor–liquid–solid AlN fiber growth. When the alumina tube was used (1800°C), nitridation of Al was enhanced and radially aligned AlN nanofibers with no droplets on the tips were collected, mainly in a filter at the exhaust port. These AlN nanofibers are thought to form via vapor–solid growth and are easily carried along with the N2 gas flow, resulting in their deposition on the filter. The products collected in the crucible contained coarse Al particles, which are formed via Al particle agglomeration and coarsening through melting.

Oxygen reduction through specific surface area control of AlN powder for AlN single-crystal growth by physical vapor transport

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

Surface Control of AlN Single Crystal Growth on SiC Substrate

Improving the structural performance of low-temperature sputtered AlN on silicon substrate

Growth of Spontaneous Nucleation AlN Crystals by Al-Base Alloy Evaporation in Nitrogen Atmosphere

Facile synthesis of monodisperse aluminum nitride microspheres

Seeded Growth of AlN Crystals on Nonpolar Seeds Via Physical Vapor Transport

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal-organic vapor phase epitaxy

Synthesis of AlN particles via direct nitridation in a drop tube furnace

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Evolution of 2-inch AlN Single Crystal Grown on SiC Seed via PVT method

Crucible Materials for Growth of Aluminum Nitride Crystals

A novel method to increase the growth rate in sublimation crystal growth of advanced materials

Reduction of hexagonal defects in N-polar AlGaN epitaxial layers grown with reformed pulsed-flow technology

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Low temperature growth of c-axis oriented AlN films on γ-LiAlO2 by radio frequency magnetron sputtering

Synthesis of Aluminum Nitride Using Sodium Aluminate as Aluminum Source

The Durability of Various Crucible Materials for Aluminum Nitride Crystal Growth by Sublimation