Abstract:In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH3-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH2, NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH2 radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH3/Ar plasma PEALD involving oxygen participation or not is also discussed in the study.

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Growth of High Quality AlN on Sapphire with Multi-Growth Approaches

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture

Pulsed N2 Plasma Surface Treatment for AlGaN/GaN HEMTs Prior to PECVD SiNx Passivation to Reduce Plasma Damage

Epitaxial AlN film with improved quality on Si (111) substrates realized by boron pretreatment via MOCVD

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Effect of Al Substrate Nitridation on the Properties of AlN Films Grown by Pulsed Laser Deposition and Its Mechanism

Improved Characteristics of (112‾2) Al0.62Ga0.38N Film Grown with Pulsed Flow Growth Technique

Characterization of Atomic-Layer-deposited Al2O3∕GaAs Interface Improved by NH3 Plasma Pretreatment

Improvement of AlN Film Quality by Controlling the Coalescence of Nucleation Islands in Plasma-Assisted Molecular Beam Epitaxy

Improved Ohmic Contacts to Plasma Etched High Al Fraction N-Algan by Active Surface Pretreatment

High-quality AlN growth: a detailed study on ammonia flow

Synthesis of High-Quality AlN Films on (la,sr) (al,ta)o3 Substrates by Pulsed Laser Deposition

Epitaxial Growth of High Quality AlN Films on Metallic Aluminum Substrates

Novel Method for Improving Process Repeatability of the AlN Buffer Layer

Epitaxial Growth of High Quality AlN Films on Si Substrates

Improved Surface Morphology and Reduced V-Pits Density of Lattice-Matched Alinn Films Grown by Atmospheric Pressure Metalorganic Chemical Vapor Deposition

High Quality AlN Film Grown on a Nano-Concave-circle Patterned Si Substrate with an AlN Seed Layer

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Nitrogen Plasma Etching and Surface Passivation of GaAs Via Plasma-Enhanced Atomic Layer Deposition

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control