Abstract:In recent years, the application of (In, Al, Ga)N materials in photovoltaic devices has attracted much attention. Like InGaN, it is a direct band gap material with high absorption at the band edge, suitable for high efficiency photovoltaic devices. Nonetheless, it is important to deposit high-quality GaN material as a foundation. Plasma-enhanced atomic layer deposition (PEALD) combines the advantages of the ALD process with the use of plasma and is often used to deposit thin films with different needs. However, residual oxygen during growth has always been an unavoidable issue affecting the quality of the resulting film, especially in growing gallium nitride (GaN) films. In this study, the NH3-containing plasma was used to capture the oxygen absorbed on the growing surface to improve the quality of GaN films. By diagnosing the plasma, NH2, NH, and H radicals controlled by the plasma power has a strong influence not only on the oxygen content in growing GaN films but also on the growth rate, crystallinity, and surface roughness. The NH and NH2 radicals contribute to the growth of GaN films while the H radicals selectively dissociate Ga-OH bonds on the film surface and etch the grown films. At high plasma power, the GaN film with the lowest Ga-O bond ratio has a saturated growth rate, a better crystallinity, a rougher surface, and a lower bandgap. In addition, the deposition mechanism of GaN thin films prepared with a trimethylgallium metal source and NH3/Ar plasma PEALD involving oxygen participation or not is also discussed in the study.

Novel Method for Improving Process Repeatability of the AlN Buffer Layer

Sputtering Growth of Preferential C-Axis-oriented Aluminum Nitride Film Using Homogeneous Buffer Layer

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method

Improving quality of AlN films on GaAs substrate via in-situ plasma pre-treatment in plasma enhanced atomic layer deposition

Study of Buffer and Epitaxy Technology in Two-Step Growth of Aluminium Nitride

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

The solution of wetting issues in GaN epitaxy on (111) SCD with magnetron sputtered AlN

High-quality AlN Epitaxy on Sapphire Substrates with Sputtered Buffer Layers

Effect of substrate temperature on properties of AlN buffer layer grown by remote plasma ALD

Influence of Sputtered AlN Buffer on GaN Epilayer Grown by MOCVD

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

AlN interlayer to improve the epitaxial growth of SmN on GaN (0001)

High-quality GaN grown on nitrogen-doped monolayer graphene without an intermediate layer

Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy

Influence of AlN Buffer Layer on GaN Film Growth on Si(111) Substrates

The Effect of Al Interlayers on the Growth of AlN on Si Substrates by Metal Organic Chemical Vapor Deposition

Effects of Buffer Layer on Structural Properties of Nonpolar (112¯0)-Plane GaN Film

Effects of Buffer Layer on Structural Properties of Nonpolar (11(2)over-bar0)-Plane GaN Film

Pit density reduction for AlN epilayers grown by molecular beam epitaxy using Al modulation method

High-Quality AlN Film Grown on Sputtered AlN/Sapphire Via Growth-Mode Modification

Growth of GaN Thin Films Using Plasma Enhanced Atomic Layer Deposition: Effect of Ammonia-Containing Plasma Power on Residual Oxygen Capture