Abstract:In this study, the process of surface morphology control was researched by combining the computation fluid dynamics (CFD) simulations and physical vapor transport (PVT) growth experiments. The results indicate the essentiality of preserving the surface structure of SiC substrate with macroscopic steps at the initial stage of the heterogeneous PVT growth. We identified an optimal range of growth temperature (Tg) and pressure to maintain the active Al vapor below a critical threshold. In the subsequent process, the pivotal factor for controlling the surface morphology of the AlN layer is identified as the supersaturation near the growing surface. Excessive supersaturation leads to a transition from a 2D to a 3D growth mode, resulting in a shift from a smooth to a rough surface morphology. An appropriate level of supersaturation can be achieved by carefully controlling the Tg, striking a balance between high surface quality and growth rate. Herein, we proposed a two-step PVT method for cultivating high-surface-quality AlN crystals on SiC substrates. At the first stage, the Tg is maintained below a threshold corresponding to the critical Al vapor pressure to preserve the surface structure until the SiC surface is completely covered by AlN. Then, Tg is elevated to near transition temperature (Ttran) to continue AlN single crystal growth at a proper rate for a long time, where Ttran is defined as the growth temperature at which the transition of the dominant mode from step growth to 3D growth happens. Two-inch-diameter AlN single crystals of thicknesses of nearly 1 mm with a smooth and lustrous surface have been obtained on SiC substrate by the two-step method.

Modeling and simulation of AlN bulk sublimation growth systems

A Thermal Transport And Non-Equilibrium Deposition Model In Aln Sublimation Growth Process

Transport phenomena in an aluminum nitride induction heating sublimation growth system

Design and Optimization of an Aluminum Nitride Sublimation Growth System

Effect of thermal environment evolution on AlN bulk sublimation crystal growth

Thermal Environment Evolution and Its Impact on Vapor Deposition in Large Diameter AlN Bulk Growth

Design of an RF-Heated Bulk AlN Growth Reactor: Induction Heating and Heat Transfer Modeling

Isotropic and Anisotropic Growth Models for the Sublimation Vapour Transport Process

Influence of Temperature Field Distribution on the Growth of Aluminum Nitride Crystal by Simulation Technology

A novel method to increase the growth rate in sublimation crystal growth of advanced materials

Modeling of Multi-Species Transfer During Aluminum Nitride Vapor Growth

Optimization of the process parameters for the AlN crystal growth in the PVT method through an improved numerical simulation considering partial pressure of gas phases

Modeling of Aluminum Nitride Growth by Halide Vapor Transport Epitaxy Method

Modeling of Gas Phase and Surface Reactions in an Aluminum Nitride Growth System

Influence of Different Heater Structures on the Temperature Field of AlN Crystal Growth by Resistance Heating

Atomic Simulation of Homoepitaxial AlN on Non-Polar (11-20) Plane

Growth and Characterization of Bulk Aluminum Nitride by Physical Vapor Transport

Optimizing crucible geometry to improve the quality of AlN crystals by the physical vapor transport method

Large-Sized GaN Crystal Growth Analysis in an Ammonothermal System Based on a Well-Developed Numerical Model

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Surface Control of AlN Single Crystal Growth on SiC Substrate