Abstract:In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal-organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical decomposition of graphene on a GaN substrate at high temperatures has obstructed the achievement of remote homoepitaxy via MOCVD. Our research uncovers an unexpected stability of graphene on N-polar GaN, thereby enabling the MOCVD-based remote homoepitaxy of N-polar GaN. Our comparative analysis of N- and Ga-polar GaN substrates reveals markedly different outcomes: while a graphene/N-polar GaN substrate produces releasable microcrystals (μCs), a graphene/Ga-polar GaN substrate yields nonreleasable thin films. We attribute this discrepancy to the polarity-dependent thermochemical stability of graphene on the GaN substrate and its subsequent reaction with hydrogen. Evidence obtained from Raman spectroscopy, electron microscopic analyses, and overlayer delamination points to a pronounced thermochemical stability of graphene on N-polar GaN during MOCVD-based remote homoepitaxy. Molecular dynamics simulations, corroborated by experimental data, further substantiate that the thermochemical stability of graphene is reliant on the polarity of GaN, due to different reactions with hydrogen at high temperatures. Based on the N-polar remote homoepitaxy of μCs, the practical application of our findings was demonstrated in fabrication of flexible light-emitting diodes composed of p-n junction μCs with InGaN heterostructures.

Influence of Temperature‐Dependent Substrate Decomposition on Graphene for Separable GaN Growth

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

Influence of Graphene Stability on III-Nitride Remote Epitaxy for Exfoliation

Suppressing Temperature Rise in AlGaN/GaN HEMT with Graphene Layers

Remote Epitaxy and Exfoliation of GaN Via Graphene

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Influence of the annealing time on graphene growth by using thermal decomposition method

Critical Crystal Growth of Graphene on Dielectric Substrates at Low Temperature for Electronic Devices.

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

Low-temperaturevan Der Waals Epitaxy of GaN Films on Graphene Through AlN Buffer by Plasma-Assisted Molecular Beam Epitaxy

Effect Of Substrate Temperature On Few-Layer Graphene Grown On Al2o3 (0001) Via Direct Carbon Atoms Deposition

Exploring GaN crystallographic orientation disparity and its origin on bare and partly graphene-covered $m$-plane sapphire substrates

Nucleation and growth of graphene at different temperatures by plasma enhanced chemical vapor deposition

Temperature Effect of van der Waals Epitaxial GaN Films on Pulse-Laser-Deposited 2D MoS2 Layer

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

Growth Mechanism of Transfer-Free Graphene Synthesized from Different Carbon Sources and Verified by Ion Implantation

Temperature-dependent epitaxial evolution of carbon-free corundumα-Ga2O3 on sapphire

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Analyses of Surface Temperatures on Patterned Sapphire Substrate for the Growth of GaN with Metal Organic Chemical Vapor Deposition