Abstract:Heteroepitaxy of gallium oxide (Ga2O3) is gaining popularity to address the absence of p-type doping, limited thermal conductivity of Ga2O3 epilayers, and toward realizing high-quality p-n heterojunction. During the growth of β-Ga2O3 on 4H-SiC (0001) substrates using metal-organic chemical vapor deposition, we observed formation of incomplete, misoriented particles when the layer was grown at a temperature between 650 °C and 750 °C. We propose a thermodynamic model for Ga2O3 heteroepitaxy on foreign substrates which shows that the energy cost of growing β-Ga2O3 on 4H-SiC is slightly lower as compared to sapphire substrates, suggesting similar high-temperature growth as sapphire, typically in the range of 850 °C-950 °C, that can be used for the growth of β-Ga2O3 on SiC. A two-step modified growth method was developed where the nucleation layer was grown at 750 °C followed by a buffer layer grown at various temperatures from 920 °C to 950 °C. 2θ-ω scan of X-ray diffraction (XRD) and transmission electron microscope images confirm the β-polymorph of Ga2O3 with dominant peaks in the (-201) direction. The buffer layer grown at 950 °C using a "ramp-growth" technique exhibits root-mean-square surface roughness of 3 nm and full width of half maxima of XRD rocking curve as low as 0.79°, comparable to the most mature β-Ga2O3 heteroepitaxy on sapphire, as predicted by the thermodynamic model. Finally, the interface energy of an average Ga2O3 island grown on 4H-SiC is calculated to be 0.2 J/m2 from the cross-section scanning transmission electron microscope image, following the Wulff-Kaishew theorem of the equilibrium island shape.

Temperature-dependent epitaxial evolution of carbon-free corundumα-Ga2O3 on sapphire

Phase Tailoring and Wafer-Scale Uniform Hetero-Epitaxy of Metastable-Phased Corundum Α-Ga2o3 on Sapphire

Influence of Carrier Gases on the Quality of Epitaxial Corundum-Structured α-Ga2O3 Films Grown by Mist Chemical Vapor Deposition Method

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

Heteroepitaxial growth of α-Ga2O3 thin films on a-, c- and r-plane sapphire substrates by low-cost mist-CVD method

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Step-edge-guided nucleation and growth mode transition of α-Ga 2 O 3 heteroepitaxy on vicinal sapphire

Step-edge-guided Nucleation and Growth Mode Transition of Α-Ga2o3 Heteroepitaxy on Vicinal Sapphire

Thermodynamics of Ga2O3 Heteroepitaxy and Material Growth Via Metal Organic Chemical Vapor Deposition

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

Temperature Dependence of $β-Ga_2O_3$ Heteroepitaxy on c-plane Sapphire using Low Pressure Chemical Vapor Deposition

Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

Heteroepitaxial Growth of Thickα-Ga2o3film on Sapphire (0001) by MIST-CVD Technique

Crystal orientation dictated epitaxy of ultrawide bandgap 5.4-8.6 eV $α$-(AlGa)$_2$O$_3$ on m-plane sapphire

Epitaxial growth of α-(Al x Ga1− x )2O3 by suboxide molecular-beam epitaxy at 1 μm/h

Unraveling evolution of microstructural domains in the heteroepitaxy of β -Ga2O3 on sapphire

Temperature Dependence of Ultrathin Mixed-Phase Ga2O3 Films Grown on the α-Al2O3 Substrate via Mist-CVD

Non-equilibrium epitaxy of metastable polymorphs of ultrawide-bandgap gallium oxide

Recent progress on the electronic structure, defect, and doping properties of Ga2O3

A Review of Recent Progress in β‐Ga2O3 Epitaxial Growth: Effect of Substrate Orientation and Precursors in Metal–Organic Chemical Vapor Deposition

Heteroepitaxial Growth of an Ultrathin β-Ga2O3 Film on a Sapphire Substrate Using Mist CVD with Fluid Flow Modeling