Abstract:Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

Polarity Dependence of Hexagonal Gan Films on Two Opposite C Faces of Al2o3 Substrate

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Achievement of Polarity Reversion from Al(Ga)-polar to N-polar for AlGaN Film on AlN Seeding Layer Grown by a Novel Flow‐modulation Technology

Effect of GaN Interlayer on Polarity Control of Epitaxial ZnO Thin Films Grown by Molecular Beam Epitaxy

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Characterizations of GaN Films and AlGaN/GaN Heterostructures on Vicinal Sapphire (0001) Substrates Grown by MOCVD

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Lattice Polarity Manipulation of Quasi‐vdW Epitaxial GaN Films on Graphene Through Interface Atomic Configuration (Adv. Mater. 5/2022)

Analysis of the anisotropy in an m-plane GaN film via HVPE on a γ-LiAlO_2 substrate

Polarity control of ZnO films grown with high temperature N-polar GaN intermediate layers by plasma-assisted molecular beam epitaxy

Polarity Control Of Zno Films Grown On Nitrided C-Sapphire By Molecular-Beam Epitaxy

Selective Etching of Gan Polar Surface in Potassium Hydroxide Solution Studied by X-Ray Photoelectron Spectroscopy

Analysis of the Anisotropy in an M-Plane Gan Film Via Hype on A Gamma-Lialo2 Substrate

Growth of N-Polar Gan on Vicinal Sapphire Substrate by Metal Organic Chemical Vapor Deposition

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond

The role of AlN thickness in MOCVD growth of N-polar GaN

Prepare of ZnAl2O4/-Al2O3 Complex Substrates and Growth of GaN Films