Abstract:In this paper, three GaN epilayers grown on commercially available cone-patterned sapphire substrates (PSS) by Metal Organic Vapor Phase Epitaxy (MOVPE) were investigated. Voltage dependence of monochromatic cathodoluminescence (CL) was applied to investigate the threading dislocation (TD) behaviors. Fewer TDs were observed in CL images when the penetration depth of electron was made shorter by altering the acceleration voltage from 30 to 5kV. It was shown that many TDs were generated on the peaks of the cones, in-between cones, and in the coalescence regions, while there was almost no TD above the slopes of the cones. When the growth pressure was changed from 200 to 100Torr during the final stage, fewer TDs were observed in CL images, and the full widths at half maximum (FWHMs) for the (002) and (102) reflections’ X-ray diffraction (XRD) rocking curves decreased. Furthermore, when the growth temperature was decreased from 1040 to 1000°C during the middle stage, a clear hexagonal distribution of TDs was observed and the FWHMs for the (002) and (102) reflections’ XRD rocking curves further decreased. Atomic force microscopy (AFM) was used to investigate the surface morphology of the samples. In situ optical reflectivity spectra were measured to monitor the growth mode during the different growth stages. Based on the CL and reflectivity spectra results, the process of TDs’ evolution and distribution was deduced and sketched.

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Epitaxy N-polar GaN on vicinal Sapphire substrate by MOCVD

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Geometrically-Controlled Microscale Patterning and Epitaxial Lateral Overgrowth of Nitrogen-Polar GaN

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE

MOCVD growth of N-polar GaN on on-axis sapphire substrate: impact of AlN nucleation layer on GaN surface hillock density

(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Step-edge-guided Nucleation and Growth Mode Transition of Α-Ga2o3 Heteroepitaxy on Vicinal Sapphire

Control of GaN inverted pyramids growth on c-plane patterned sapphire substrates

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

Step-edge-guided nucleation and growth mode transition of α-Ga 2 O 3 heteroepitaxy on vicinal sapphire

In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

The role of AlN thickness in MOCVD growth of N-polar GaN

Morphology and Defect of A-Gan Grown by Metal Orgamic Chemical Vapor Deposition

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

"WM"-Shaped Growth of GaN on Patterned Sapphire Substrates

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy