Abstract:As well-known,heteroepitaxial growth on sapphire is mainly employed to obtain optoelectronic(devices) because there is no suitable substrate matching with GaN.Therefore,the GaN layer suffers from a stress due to large difference in lattice constants and thermal expansion coefficients between the GaN and sapphire.To improve the quality of devices,the epitaxial lateral overgrowth(ELO) technique is applied to GaN.ELO-GaN on patterned SiO_2/GaN/α-Al_2O_3 substrate is grown by metalorganic chemical vapor deposition(MOCVD).First,a high quality 3 μm thick layer of GaN is grown by MOCVD.Next,standard deposition and photolithographic techniques are employed to prepare a set of parallel SiO_2 stripes oriented along a(〈11-00〉) GaN crystal direction separated by window areas which expose the underlying GaN.A second deposition of GaN onto this patterned substrate is then initiated.During the initial GaN growth,the SiO_2 stripes function as nonwettable surfaces and no GaN deposition occurs on them.However,once the GaN film growth from the window stripes reaches the tops of the SiO_2 stripes,epitaxial lateral overgrowth of GaN commences.The GaN thickness of the second step growth is about 10 μm.The results of a systematic study of the ELO-GaN on sapphire are reported.Atomic force microscopy(AFM) images showed that the surface of ELO-GaN is smooth and that there are linear-configuration hillocks in the middle of mask region,which are caused by the misorientation of crystalline when the ELO-GaN coalesce above the masks.The X-ray diffraction(XRD) curve revealed that the tilts in the(〈11-20〉) direction between GaN in window regions and mask regions are about 1.2°.Raman scattering spectrum revealed that the stress in the mask region is smaller than that in the window region and also the quality of GaN is much higher in the mask region.As a result,the quality of GaN crystalloid is effectively improved by MOCVD using the ELO technique.

Lateral and Vertical Growth Study in the Initial Stages of GaN Growth on Sapphire with ZnO Buffer Layers by Hydride Vapor Phase Epitaxy

Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers

The impact of initial growth and substrate nitridation on thick GaN growth on sapphire by hydride vapor phase epitaxy

The Nature and Impact of ZnO Buffer Layers on the Initial Stages of the Hydride Vapor Phase Epitaxy of GAN

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

The Effects of Sapphire Nitridation on GaN Growth by Metalorganic Chemical Vapour Deposition

Nucleation Mechanism for Epitaxial Growth of GaN on Patterned Sapphire Substrates

The Growth of High-Quality and Self-Separation GaN Thick-Films by Hydride Vapor Phase Epitaxy

Direct Growth of GaN on Sapphire with Non-Catalytic CVD Graphene Layers at High Temperature

Analysis of GaN Crystal Growth Mechanism in Liquid-Phase Epitaxial Na-flux Method

A Study of GaN Nucleation and Coalescence in the Initial Growth Stages on Nanoscale Patterned Sapphire Substrates Via MOCVD

Effect of initial condition on the quality of GaN film and AlGaN/GaN heterojunction grown on flat sapphire substrate with ex-situ sputtered AlN by MOCVD

Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition

Epitaxial Lateral Overgrowth of GaN with Chloride-Based Growth Chemistries in Both Hydride and Metalorganic Vapor Phase Epitaxy

Optimization of the Parameters for Growth High-Qulity Gan Film by Hydride Vapor Phase Epitaxy

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Structural Characterization of Epitaxial Lateral Overgrowth GaN by MOCVD

Lateral epitaxial overgrowth of GaN using diethyl gallium chloride in metal organic vapor phase epitaxy

Epitaxial Lateral Overgrowth Of Gan On Si Substrates By Hydride Vapor Phase Epitaxy

MOCVD Growth of Device-Quality GaN on Sapphire Using a Three-Step Approach

Nucleation Mechanism of GaN Growth on Wet Etched Pattern Sapphire Substrates